18234290. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Takuya Yasutake of Kanazawa Ishikawa (JP)

Yasunobu Saito of Inagi Tokyo (JP)

Tsuyoshi Kachi of Kanazawa Ishikawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18234290 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation: The semiconductor device described in the patent application consists of multiple layers and electrodes, with specific positioning and conductivity types for each layer.

Key Features and Innovation:

• The device includes a first electrode, second electrode, first semiconductor layer, third electrode, second semiconductor layer, third semiconductor layer, fourth electrode, and fourth semiconductor layer.
• The third semiconductor layer extends towards the first electrode side from the second semiconductor layer.
• The lower end of the third semiconductor layer on the first electrode side is positioned closer to the first electrode side than the lower surface of the second semiconductor layer.
• The third semiconductor layer is of the second conductivity type, while the fourth semiconductor layer is of the first conductivity type.
• The fourth electrode faces the second semiconductor layer through the insulating body and is electrically connected to the fourth semiconductor layer.

Potential Applications: This semiconductor device could be used in various electronic applications, such as power electronics, sensors, and communication devices.

Problems Solved: The device addresses the need for efficient and reliable semiconductor components with specific layer arrangements and conductivity types.

Benefits:

• Improved performance and functionality in electronic devices.
• Enhanced conductivity and connectivity within the semiconductor device.
• Potential for miniaturization and increased efficiency in electronic systems.

Commercial Applications: Potential commercial applications include power electronics, sensor technology, and communication devices. The technology could also be utilized in the automotive industry for electric vehicles.

Prior Art: Readers interested in prior art related to this technology can explore semiconductor device patents, specifically those focusing on layer arrangements and conductivity types.

Frequently Updated Research: Stay updated on semiconductor device advancements, particularly in the areas of power electronics and sensor technology, to understand the latest developments in the field.

Questions about Semiconductor Devices: 1. What are the key factors to consider when designing semiconductor devices for specific applications? 2. How do different conductivity types in semiconductor layers impact the overall performance of the device?

Original Abstract Submitted

A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a third electrode, a second semiconductor layer, a third semiconductor layer, a fourth electrode, and a fourth semiconductor layer. The third semiconductor layer extends from the second semiconductor layer toward the first electrode side. A lower end of the third semiconductor layer at the first electrode side is positioned further toward the first electrode side than the lower surface of the second semiconductor layer and is separated from the insulating body. The third semiconductor layer is of the second conductivity type. The fourth electrode faces the second semiconductor layer via an other portion of the insulating body. The fourth semiconductor layer is located between the second semiconductor layer and the second electrode and electrically connected with the second electrode. The fourth semiconductor layer is of the first conductivity type.