18676612. SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE simplified abstract (Huawei Technologies Co., Ltd.)
Contents
SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18676612 titled 'SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE
The semiconductor component and electronic device in this patent application are designed to reduce the gate-drain parasitic capacitance of the semiconductor component. The semiconductor component includes a substrate, a channel layer, a barrier layer, a source, a drain, a first gate, a second gate, a first gate field plate, and a first source field plate.
- The substrate serves as the foundation for the semiconductor component.
- The channel layer and barrier layer are stacked on the substrate.
- The source and drain are located on the barrier layer.
- The first gate and second gate are positioned between the source and drain, with the second gate between the first gate and the drain.
- A first gate field plate is partially placed on the side of the first gate close to the drain.
- A first source field plate covers the first gate field plate.
Potential Applications: - This technology can be applied in the development of high-performance electronic devices. - It can be utilized in the manufacturing of advanced semiconductor components for various industries.
Problems Solved: - Reducing the gate-drain parasitic capacitance of semiconductor components. - Enhancing the overall efficiency and performance of electronic devices.
Benefits: - Improved functionality and reliability of semiconductor components. - Increased speed and efficiency of electronic devices. - Reduction in power consumption and heat generation.
Commercial Applications: Title: Advanced Semiconductor Components for High-Performance Electronics This technology has significant commercial potential in industries such as telecommunications, consumer electronics, and automotive electronics. It can be integrated into a wide range of electronic devices to enhance their performance and efficiency.
Prior Art: To explore prior art related to this technology, researchers can investigate patents and publications in the field of semiconductor devices, gate-drain capacitance reduction techniques, and advanced electronic components.
Frequently Updated Research: Researchers and developers in the semiconductor industry are continuously exploring new methods to improve the performance and efficiency of electronic devices. Stay updated on the latest advancements in gate-drain capacitance reduction and semiconductor component design to leverage cutting-edge technologies in your projects.
Questions about the Technology: 1. How does the reduction of gate-drain parasitic capacitance impact the overall performance of electronic devices? 2. What are the key factors to consider when implementing this technology in different types of semiconductor components?
Original Abstract Submitted
A semiconductor component and an electronic device are structured to reduce a gate-drain parasitic capacitance of the semiconductor component. The semiconductor component includes: a substrate; a channel layer and a barrier layer that are sequentially stacked on the substrate; a source and a drain that are disposed on the barrier layer; a first gate and a second gate that are disposed on the barrier layer. The first gate and the second gate are located between the source and the drain, and the second gate is disposed between the first gate and the drain. A first gate field plate is at least partially disposed on a side that is of the first gate and that is close to the drain; and a first source field plate. The first source field plate covers the first gate field plate.
