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18675505. LITHOGRAPHY TECHNIQUES FOR REDUCING DEFECTS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)

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LITHOGRAPHY TECHNIQUES FOR REDUCING DEFECTS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor(s)

Ming-Hui Weng of New Taipei City (TW)

Ching-Yu Chang of Yilan (TW)

LITHOGRAPHY TECHNIQUES FOR REDUCING DEFECTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18675505 titled 'LITHOGRAPHY TECHNIQUES FOR REDUCING DEFECTS

The abstract describes a lithography method involving the formation of a resist layer on a substrate, treatment to create different molecular weights in the resist layer, exposure, and development processes to form a patterned resist layer.

  • Formation of resist layer on substrate
  • Treatment to create different molecular weights in the resist layer
  • Exposure process
  • Developing process to form a patterned resist layer

Potential Applications: - Semiconductor manufacturing - Nanotechnology - Microelectronics

Problems Solved: - Achieving precise patterning on substrates - Enhancing resolution in lithography processes

Benefits: - Improved precision in patterning - Enhanced resolution capabilities - Cost-effective lithography method

Commercial Applications: Title: Advanced Lithography Method for Semiconductor Manufacturing This technology can be utilized in the production of semiconductors, nanotechnology devices, and microelectronics, offering a more efficient and precise lithography process.

Prior Art: Readers can explore prior art related to lithography methods, resist layer treatments, and semiconductor manufacturing processes to gain a deeper understanding of the innovation.

Frequently Updated Research: Stay updated on the latest advancements in lithography methods, resist materials, and semiconductor manufacturing techniques to enhance knowledge and application of this technology.

Questions about Lithography Method: 1. How does the treatment process impact the molecular weights in the resist layer? 2. What are the key differences between traditional lithography methods and this innovative approach?


Original Abstract Submitted

A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.

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