18484887. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Seokcheon Baek of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18484887 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The semiconductor device described in the patent application consists of a substrate with a cell array region and a connection region in one direction, and a stack structure with electrode layers and inter-electrode insulating layers stacked alternately in another direction.
- The electrode layers include first and second electrode layers stacked alternately, with each first electrode layer having a connection portion in the cell array region and front and back ends in the connection region at the same level.
- The front end of the first electrode layer features a protrusion towards the back end, with these protrusions not overlapping the second electrode layers.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and memory devices.
Problems Solved: - This innovation addresses the need for improved efficiency and performance in semiconductor devices. - It solves challenges related to the precise positioning and connectivity of electrode layers in semiconductor structures.
Benefits: - Enhanced functionality and reliability of semiconductor devices. - Improved manufacturing processes for complex electronic components.
Commercial Applications: - The technology could be utilized in the production of smartphones, computers, and other consumer electronics. - It may also have applications in the automotive industry for advanced driver assistance systems and vehicle electronics.
Questions about the Technology: 1. How does the protrusion design in the electrode layers contribute to the overall performance of the semiconductor device? 2. What specific advantages does the alternating stack structure provide in terms of functionality and efficiency?
Original Abstract Submitted
A semiconductor device includes a substrate including a cell array region and a connection region in a first direction and a stack structure including electrode layers and inter-electrode insulating layers alternately stacked in a second direction, the electrode layers including first electrode layers and second electrode layers alternately stacked, each of the first electrode layers includes a first connection portion in the cell array region and a first front end and a first back end spaced apart from each other in a third direction in the connection region and positioned at the same level as each other, the first front end and the first back end are connected to the first connection portion, the first front end has a first protrusion protruding toward the first back end, and the first protrusions of the first front ends do not overlap the second electrode layers.
