18474345. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Donghoon Kwon of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18474345 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract describes a three-dimensional semiconductor memory device with various layers and structures on a substrate.
- The device includes a cell array region, contact region, stack structure, interlayer dielectric layers, gate electrodes, second dielectric layer, cell contact plug, selection mold structure, third dielectric layer, capping through contact, and dummy through contact.
- The dummy through contact and capping through contact have different widths, providing unique functionality to the device.
Potential Applications:
- This technology can be used in high-density memory devices for various electronic applications.
- It can enhance the performance and efficiency of semiconductor memory systems.
Problems Solved:
- Addresses the need for increased memory density and performance in semiconductor devices.
- Provides a solution for optimizing space and functionality in memory systems.
Benefits:
- Improved memory capacity and performance.
- Enhanced efficiency and functionality in semiconductor memory devices.
Commercial Applications:
- This technology can be applied in consumer electronics, data storage systems, and other semiconductor devices to improve memory capabilities and overall performance.
Questions about the technology: 1. How does the different widths of the dummy through contact and capping through contact impact the functionality of the memory device? 2. What are the specific advantages of using a three-dimensional semiconductor memory device in comparison to traditional memory systems?
Original Abstract Submitted
A three-dimensional semiconductor memory device comprises a first substrate including a cell array region and a contact region, a stack structure including interlayer dielectric layers and gate electrodes on the first substrate, a second dielectric layer on the stack structure, a cell contact plug that extends through the second dielectric layer and the contact region, a selection mold structure on the stack structure and the second dielectric layer, a third dielectric layer on the selection mold structure, and a capping through contact and a dummy through contact that extend through the selection mold structure and are connected to the cell contact plug. The dummy through contact has a second width. The capping through contact has a first width. The second width is different from the first width.
