Sk hynix inc. (20240313073). SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Hyun Han of Icheon-si Gyeonggi-do (KR)
Won Tae Koo of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313073 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a channel layer, a gate electrode, a blocking insulating layer, a tunnel insulating layer, and nano-particles.
- The device has a channel layer where the electrical current flows.
- A gate electrode is positioned above the channel layer but is separated from it.
- A blocking insulating layer is placed between the gate electrode and the channel layer to prevent leakage of current.
- A tunnel insulating layer is located between the channel layer and the blocking insulating layer to control the flow of electrons.
- Nano-particles are dispersed between the tunnel insulating layer and the blocking insulating layer to enhance the device's performance.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, computers, and tablets. - It can also be applied in data storage systems and memory modules.
Problems Solved: - The device addresses issues related to current leakage and electron flow control in semiconductor memory devices. - It improves the efficiency and reliability of memory storage systems.
Benefits: - Enhanced performance and reliability of electronic devices. - Improved data storage capabilities. - Increased efficiency in memory modules.
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Performance" This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and increased consumer satisfaction.
Questions about Semiconductor Memory Devices: 1. How do nano-particles contribute to the performance of the semiconductor memory device?
- Nano-particles help enhance the device's efficiency and reliability by optimizing electron flow control.
2. What role does the tunnel insulating layer play in the operation of the semiconductor memory device?
- The tunnel insulating layer regulates the flow of electrons between the channel layer and the blocking insulating layer, ensuring proper functionality of the device.
Original Abstract Submitted
a semiconductor memory device includes a channel layer, a gate electrode spaced apart from the channel layer, a blocking insulating layer between the gate electrode and the channel layer, a tunnel insulating layer between the channel layer and the blocking insulating layer, and nano-particles spaced apart from each other between the tunnel insulating layer and the blocking insulating layer.
