Sk hynix inc. (20240313040). CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS simplified abstract
Contents
CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS
Organization Name
Inventor(s)
Se Hun Kang of Gyeonggi-do (KR)
CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313040 titled 'CAPACITOR COMPRISING ANTI-FERROELECTRIC LAYERS AND HIGH-K DIELECTRIC LAYERS
The semiconductor device described in the patent application consists of a first electrode, a second electrode, and a multi-layer stack positioned between them. The multi-layer stack includes at least one anti-ferroelectric layer and at least one high-k dielectric layer.
- The semiconductor device features a multi-layer stack with anti-ferroelectric and high-k dielectric layers.
- The inclusion of anti-ferroelectric and high-k dielectric layers enhances the performance and efficiency of the device.
- The unique combination of layers in the stack contributes to improved functionality and reliability of the semiconductor device.
- This innovation opens up new possibilities for advanced semiconductor technology and applications.
- The patent application showcases cutting-edge developments in semiconductor device design and materials.
Potential Applications: The technology can be applied in various electronic devices such as memory storage, sensors, and actuators. It can also be utilized in communication systems, medical devices, and automotive electronics.
Problems Solved: Enhanced performance and efficiency of semiconductor devices. Improved reliability and functionality in electronic applications. Benefits: Increased speed and efficiency in electronic devices. Enhanced reliability and functionality. Potential cost savings in manufacturing processes.
Commercial Applications: The technology can be leveraged in the production of high-performance electronic devices for consumer electronics, industrial applications, and telecommunications. It has the potential to drive innovation in the semiconductor industry and create new opportunities for product development.
Questions about the technology: 1. How does the inclusion of anti-ferroelectric and high-k dielectric layers impact the performance of the semiconductor device? 2. What are the potential cost savings associated with implementing this technology in electronic devices?
Original Abstract Submitted
a semiconductor device includes a first electrode, a second electrode, and a multi-layer stack positioned between the first electrode and the second electrode, the multi-layer stack including at least one anti-ferroelectric layer and at least one high-k dielectric layer.
