Sk hynix inc. (20240312539). MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME simplified abstract
MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME
Organization Name
Inventor(s)
Jun Young Kweon of Gyeonggi-do (KR)
MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312539 titled 'MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME
The abstract describes a memory device capable of performing an erase verify operation on a cell string group basis, along with the method of operating the device.
- The memory device consists of multiple memory blocks, each containing several cell string groups.
- A peripheral circuit within the device is designed to carry out an erase verify operation on a selected memory block.
- An erase operation controller controls the peripheral circuit to conduct the erase verify operation in units of cell string groups within the chosen memory block.
- During the erase verify operation, different erase verify voltages are applied to the selected memory block for each cell string group.
Potential Applications: - This technology can be applied in various memory storage devices such as solid-state drives and flash memory. - It can also be used in electronic devices that require efficient memory management and data storage.
Problems Solved: - Addresses the need for a memory device capable of performing erase verify operations at a granular level. - Improves the efficiency and accuracy of erase verify operations in memory blocks.
Benefits: - Enhanced reliability and accuracy in memory operations. - Improved performance and longevity of memory storage devices. - Efficient memory management and data storage capabilities.
Commercial Applications: Title: Advanced Memory Device for Enhanced Data Storage This technology can be utilized in the development of high-performance solid-state drives, memory cards, and other data storage devices. It can benefit industries such as data storage, consumer electronics, and information technology.
Questions about the technology: 1. How does this memory device improve the reliability of data storage? 2. What are the potential cost implications of implementing this technology in memory storage devices?
Original Abstract Submitted
provided herein may be a memory device for performing an erase verify operation on a cell string group basis, and method of operating the same. the memory device may include a plurality of memory blocks, each including a plurality of cell string groups, a peripheral circuit configured to perform an erase verify operation on a memory block selected from among the plurality of memory blocks, and an erase operation controller configured to control the peripheral circuit to perform the erase verify operation in units of cell string groups within the selected memory block. the erase operation controller controls the peripheral circuit to apply, during the erase verify operation, different erase verify voltages to the selected memory block whenever the erase verify operation is performed on each of the cell string groups.
