Sk hynix inc. (20240312523). MEMORY DEVICE FOR INDIVIDUALLY APPLYING VOLTAGE TO DRAIN SELECT LINES simplified abstract
Contents
MEMORY DEVICE FOR INDIVIDUALLY APPLYING VOLTAGE TO DRAIN SELECT LINES
Organization Name
Inventor(s)
Sung Hyun Hwang of Icheon-si Gyeonggi-do (KR)
Jae Yeop Jung of Icheon-si Gyeonggi-do (KR)
Se Chun Park of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE FOR INDIVIDUALLY APPLYING VOLTAGE TO DRAIN SELECT LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312523 titled 'MEMORY DEVICE FOR INDIVIDUALLY APPLYING VOLTAGE TO DRAIN SELECT LINES
Simplified Explanation: This patent application describes a memory device that applies voltage to drain select lines individually, with a program operation control unit precharging a drain select line before applying a program voltage to the word line, based on the resistance value of the drain select line.
Key Features and Innovation:
- Individual voltage application to drain select lines
- Precharge voltage applied based on resistance value
- Efficient program operation control unit
Potential Applications: This technology could be used in various memory devices, such as flash memory, to improve programming efficiency and reliability.
Problems Solved: This technology addresses the need for more precise voltage control in memory devices to enhance performance and longevity.
Benefits:
- Improved programming efficiency
- Enhanced reliability
- Extended lifespan of memory devices
Commercial Applications: Potential commercial applications include the manufacturing of high-performance memory devices for consumer electronics, data storage systems, and industrial applications.
Prior Art: Readers can explore prior art related to this technology in the field of memory device programming and control systems.
Frequently Updated Research: Stay updated on the latest research in memory device technology and programming techniques to further enhance the efficiency and reliability of memory devices.
Questions about Memory Device Programming Technology: 1. What are the key advantages of individually applying voltage to drain select lines in memory devices? 2. How does precharging a drain select line based on resistance value improve programming efficiency and reliability?
Original Abstract Submitted
a memory device applies voltage to drain select lines, which are determined individually. a program operation control unit applies a precharge voltage to a drain select line coupled to a cell string selected from the first cell string and the second cell string before a program voltage is applied to the word line, during a time determined depending on a resistance value of the drain select line coupled to the selected cell string.
