Sk hynix inc. (20240312503). MEMORY DEVICE PERFORMING PRECHARGE OPERATION, AND OPERATING METHOD THEREOF simplified abstract
Contents
MEMORY DEVICE PERFORMING PRECHARGE OPERATION, AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Sang Hyun Ku of Gyeonggi-do (KR)
Do Hong Kim of Gyeonggi-do (KR)
Duck Hwa Hong of Gyeonggi-do (KR)
Min Ho Seok of Gyeonggi-do (KR)
So Yoon Kim of Gyeonggi-do (KR)
MEMORY DEVICE PERFORMING PRECHARGE OPERATION, AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312503 titled 'MEMORY DEVICE PERFORMING PRECHARGE OPERATION, AND OPERATING METHOD THEREOF
The memory device described in the patent application includes a row control circuit that operates in response to commands to drive selected word lines, causing their voltage levels to change in specific patterns.
- The row control circuit can decrease the voltage level of a selected word line from a first level to a second level, maintain it at the second level, and then decrease it to a third level, with a preset time amount for the second level.
- Alternatively, the second section time amount can be defined by an input of an active command based on a mode control signal.
Potential Applications: - This technology could be used in various memory devices such as DRAMs, SRAMs, and flash memory. - It may also find applications in other semiconductor devices where precise control of voltage levels on word lines is required.
Problems Solved: - Provides a more efficient and controlled way to manage voltage levels on word lines in memory devices. - Allows for flexibility in adjusting the timing of voltage level changes based on different operational modes.
Benefits: - Improved performance and reliability of memory devices. - Enhanced flexibility in operation and control of memory circuits.
Commercial Applications: Title: Advanced Memory Control Technology for Enhanced Performance This technology could be valuable for semiconductor manufacturers looking to improve the efficiency and reliability of memory devices. It could also be attractive to companies developing high-performance computing systems.
Questions about Memory Control Technology: 1. How does this technology compare to existing methods of controlling voltage levels in memory devices? - This technology offers more precise and flexible control over voltage levels on word lines, potentially leading to improved performance and reliability compared to traditional methods.
2. What impact could this technology have on the overall efficiency of memory devices? - By allowing for more efficient management of voltage levels, this technology could enhance the overall efficiency and performance of memory devices.
Original Abstract Submitted
a memory device includes a plurality of word lines; and a row control circuit configured to: drive, in response to a precharge command, a selected word line of the word lines such that a voltage level of the selected word line decreases from a first voltage level to a second voltage level during a first section, stays at the second voltage level during a second section and decreases from the second voltage level to a third voltage level during a third section, and keep the second section at a preset time amount, or change the second section to a time amount defined by an input of an active command according to a mode control signal.
