Sony group corporation (20240313013). SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Masahiro Joei of Kanagawa (JP)
Kenichi Murata of Kanagawa (JP)
Fumihiko Koga of Kanagawa (JP)
Shintarou Hirata of Kanagawa (JP)
Hideaki Togashi of Kumamoto (JP)
SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313013 titled 'SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF
Simplified Explanation: The patent application describes a solid-state imaging element with pixel transistors and wires that efficiently output and transfer pixel signals from a stacked photoelectric conversion film while keeping manufacturing costs low.
- The solid-state imaging element includes a semiconductor substrate, a first photoelectric conversion unit on the substrate, and a control unit stacked with the first unit containing multiple pixel transistors.
- The first photoelectric conversion unit consists of a second electrode, a photoelectric conversion film above the electrode converting light into charges, and a first electrode on the film.
- The pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, with the channel formation region made of an oxide semiconductor layer.
Key Features and Innovation:
- Efficient output and transfer of pixel signals from a stacked photoelectric conversion film.
- Use of pixel transistors and wires to achieve this functionality.
- Integration of an amplification transistor in the pixel transistors for signal amplification.
- Utilization of an oxide semiconductor layer in the channel formation region of the amplification transistor.
Potential Applications:
- Digital cameras
- Surveillance systems
- Medical imaging devices
Problems Solved:
- Efficient signal output and transfer in solid-state imaging elements.
- Cost-effective manufacturing of imaging elements.
- Integration of pixel transistors and amplification transistors in a compact design.
Benefits:
- Improved image quality
- Lower manufacturing costs
- Enhanced signal processing capabilities
Commercial Applications: Solid-State Imaging Element with Efficient Signal Output and Transfer: Potential applications in digital cameras, surveillance systems, and medical imaging devices. The technology offers improved image quality, cost-effective manufacturing, and enhanced signal processing capabilities.
Questions about Solid-State Imaging Element with Pixel Transistors and Wires: 1. How does the use of an oxide semiconductor layer in the channel formation region benefit the performance of the amplification transistor? 2. What are the specific advantages of using pixel transistors and wires in the efficient output and transfer of pixel signals in the imaging element?
Original Abstract Submitted
a solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. there is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.
