18181565. DYNAMIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME simplified abstract (Winbond Electronics Corp.)
Contents
DYNAMIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hsueh-Cheng Liao of Yunlin (TW)
DYNAMIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18181565 titled 'DYNAMIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME
The dynamic random access memory described in the abstract includes multiple word line structures, bit line structures, node contacts, and spacers. The word line structures are in the substrate, while the bit line structures span them above the substrate. Node contacts are positioned between adjacent word and bit line structures, with spacers on the sidewalls of the node contacts creating air gaps.
- Word line structures in substrate
- Bit line structures above substrate spanning word lines
- Node contacts between word and bit line structures
- Spacers on node contact sidewalls creating air gaps
- Top and bottom portions of spacers connected to form air gaps
Potential Applications: - Memory storage devices - Computer systems - Electronic devices requiring fast data access
Problems Solved: - Efficient data storage and retrieval - Improved memory performance - Enhanced data processing speed
Benefits: - Faster data access - Increased memory capacity - Enhanced overall system performance
Commercial Applications: Title: "Advanced Memory Technology for High-Performance Computing Systems" This technology can be utilized in: - Servers - Supercomputers - Data centers
Prior Art: Researchers can explore prior patents related to dynamic random access memory, semiconductor memory devices, and memory cell structures.
Frequently Updated Research: Stay informed about advancements in semiconductor technology, memory storage innovations, and data processing systems.
Questions about Dynamic Random Access Memory: 1. How does this technology compare to traditional memory storage solutions?
This technology offers faster data access and improved memory performance compared to traditional solutions.
2. What are the potential challenges in implementing this advanced memory technology in commercial applications?
Challenges may include cost, compatibility with existing systems, and scalability issues.
Original Abstract Submitted
Provided is a dynamic random access memory including: a plurality of word line structures, a plurality of bit line structures, a plurality of node contacts, and a plurality of spacers. The plurality of word line structures are located in a substrate. The plurality of bit line structures are located above the substrate and span the plurality of word line structures. Each of the plurality of node contacts is located between two adjacent word structures and two adjacent bit line structures. The plurality of spacers are located on a plurality of sidewalls of the plurality of node contacts. Top portions and bottom portions of two spacers of two adjacent node contacts are connected to each other to form a plurality of first air gaps.
