18346507. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Winbond Electronics Corp.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Inventor(s)
Chi-Ching Liu of Taichung City (TW)
Chia-Ming Liu of Taichung City (TW)
Yao-Ting Tsai of Kaohsiung City (TW)
Chang-Tsung Pai of Kaohsiung City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18346507 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
The method described in the patent application involves forming a semiconductor device with specific steps to achieve the desired structure and functionality.
- Isolation structure is created between active areas.
- Semiconductor structures are formed over the active areas, with a portion embedded in the isolation structure.
- Sacrificial structures are added on the semiconductor structures.
- Ion implantation process is carried out to create implanted regions between embedded portions.
- Sacrificial structures are removed to reveal patterned semiconductor structures.
- Dielectric structure is formed on the patterned semiconductor structure.
- Control structure is added on the dielectric structure.
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronic devices
Problems Solved: - Efficient formation of semiconductor structures - Improved isolation between active areas
Benefits: - Enhanced performance of semiconductor devices - Increased reliability and durability - Cost-effective manufacturing process
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing for High-Performance Electronics This technology can be utilized in the production of advanced electronic devices, leading to improved performance and reliability in various industries such as telecommunications, consumer electronics, and automotive.
Questions about the technology: 1. How does the method of embedding semiconductor structures in isolation structures improve device performance? 2. What are the key advantages of using sacrificial structures in the semiconductor manufacturing process?
Original Abstract Submitted
The method of forming the semiconductor device includes the following steps. An isolation structure is formed between a plurality of active areas. Semiconductor structures are formed over the active areas, and a portion of each semiconductor structure is embedded in the isolation structure. Sacrificial structures are formed on the semiconductor structures. An ion implantation process is performed to form implanted regions between the portions of the semiconductor structures embedded in the isolation structure. The sacrificial structures are removed to form patterned semiconductor structures. A dielectric structure is formed on the patterned semiconductor structure. A control structure is formed on the dielectric structure.
