Kioxia corporation (20240314929). SEMICONDUCTOR STORAGE DEVICE simplified abstract
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Kiyokazu Ishizaki of Nishitokyo, Tokyo (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240314929 titled 'SEMICONDUCTOR STORAGE DEVICE
The semiconductor storage device described in the patent application consists of a wiring pattern on an insulating base material, an insulating film partially covering the wiring pattern, and an electronic component. The wiring pattern includes a first pad with an arc-shaped edge and a first wire. The insulating film has a larger opening than the first pad, and the first wire is connected to the first pad in a specific angular range.
- The wiring pattern features a first pad with an arc-shaped edge.
- The insulating film covers part of the wiring pattern.
- The first wire is connected to the first pad within a specific angular range.
- The first wire has three portions: a first portion, a second portion, and a third portion.
- The first wire extends in different directions within the first pad's opening.
Potential Applications: - This technology can be used in various semiconductor storage devices. - It can improve the efficiency and performance of electronic components. - The design can be applied to different types of electronic devices for enhanced functionality.
Problems Solved: - Enhances the connectivity and reliability of wiring patterns. - Improves the overall performance of semiconductor storage devices. - Provides a more efficient and compact design for electronic components.
Benefits: - Increased reliability and durability of semiconductor storage devices. - Enhanced performance and efficiency of electronic components. - Improved design for better functionality and connectivity.
Commercial Applications: Title: Innovative Semiconductor Storage Device Design for Enhanced Performance This technology can be utilized in the manufacturing of various electronic devices, such as smartphones, computers, and IoT devices. It can also benefit companies involved in semiconductor production and electronic component manufacturing.
Questions about the technology: 1. How does the arc-shaped edge of the first pad contribute to the overall design of the semiconductor storage device? 2. What specific advantages does the angular range connection of the first wire provide in terms of performance and reliability?
Original Abstract Submitted
a semiconductor storage device includes a wiring pattern on an insulating base material; an insulating film covering partially the wiring pattern; and an electronic component. the wiring pattern includes a first pad having an edge in an arc shape, and a first wire. the insulating film has a first opening larger than the first pad. the first wire has a first portion, a second portion, and a third portion. the first portion is connected to the first pad inside the first opening extends in a first direction. the second portion is connected to the first pad inside the first opening and extends in a second direction. the third portion is connected to the first portion and the second portion. the first wire is connected with the first pad in an angular range of not more than 90 degrees in a circumferential direction of the first pad.
