Kioxia corporation (20240312505). MEMORY DEVICE simplified abstract

From WikiPatents
Revision as of 07:34, 19 September 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Naoki Matsushita of Seoul (KR)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240312505 titled 'MEMORY DEVICE

The abstract describes a memory device with multiple memory cells and interconnects, as well as a circuit that controls the flow of current during write and read operations.

  • The memory device includes a first memory cell, a second memory cell, and interconnects connecting them.
  • A third circuit in the device controls the current flow during operations on the first memory cell.
  • The first circuit supplies current to the first memory cell, while the second circuit calculates current based on the flow through the second interconnect.
  • The third circuit combines the currents from the first and second circuits to supply to the first interconnect.

Potential Applications: - This technology can be used in various memory devices such as solid-state drives and computer memory modules. - It can also be applied in embedded systems, IoT devices, and other electronic devices requiring non-volatile memory.

Problems Solved: - Efficient control of current flow in memory devices during write and read operations. - Improved performance and reliability of memory cells in electronic devices.

Benefits: - Enhanced data storage and retrieval capabilities. - Increased efficiency and speed in memory operations. - Greater durability and longevity of memory devices.

Commercial Applications: Title: Advanced Memory Device Technology for Enhanced Data Storage This technology can be utilized in the development of high-performance memory devices for consumer electronics, data centers, and industrial applications. It can lead to faster data processing, improved system performance, and increased storage capacity, making it a valuable innovation in the semiconductor industry.

Questions about Memory Device Technology: 1. How does this memory device technology compare to traditional memory architectures? - This technology offers more efficient current control and improved performance compared to traditional memory architectures. 2. What are the potential cost implications of implementing this advanced memory device technology? - The initial costs of implementing this technology may be higher, but the long-term benefits in terms of performance and reliability can outweigh the initial investment.


Original Abstract Submitted

according to one embodiment, a memory device includes a first memory cell, a second memory cell, a first interconnect connected to the first memory cell and the second memory cell, a second interconnect connected to the second memory cell, and a third circuit. the third circuit includes a first circuit connectable to the first interconnect and the second interconnect and a second circuit connectable to the first interconnect and the second interconnect. during a write operation or a read operation for the first memory cell, the first circuit outputs a first current to be supplied to the first memory cell, the second circuit outputs a third current based on a second current which flows through the second interconnect, and the third circuit supplies a sum of the first current and the third current to the first interconnect.