Kioxia corporation (20240306393). SEMICONDUCTOR MEMORY DEVICE simplified abstract

SEMICONDUCTOR MEMORY DEVICE

Organization Name

kioxia corporation

Inventor(s)

Toshifumi Minami of Yokohama Kanagawa (JP)

Atsuhiro Sato of Meguro Tokyo (JP)

Keisuke Yonehama of Kamakura Kanagawa (JP)

Yasuyuki Baba of Zama Kanagawa (JP)

Hiroshi Shinohara of Yokosuka Kanawaga (JP)

Hideyuki Kamata of Kawasaki Kanagawa (JP)

Teppei Higashitsuji of Fujisawa Kanagawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240306393 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the abstract includes a conducting layer, an insulating layer, pillars, and a plate with convex and non-convex portions.

• Conducting layer and insulating layer above semiconductor substrate
• Pillars extending in a direction crossing the substrate surface
• Plate between pillars, extending in the same direction
• Plate surface facing pillars has convex and non-convex portions

Potential Applications: - Memory storage devices - Semiconductor manufacturing - Electronic devices

Problems Solved: - Enhancing memory storage capacity - Improving semiconductor device performance - Increasing data transfer speeds

Benefits: - Higher memory density - Enhanced device efficiency - Faster data processing

Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be used in various commercial applications such as: - Consumer electronics - Data centers - Automotive electronics

Questions about the technology: 1. How does the design of the plate with convex and non-convex portions impact memory storage? 2. What are the advantages of having pillars that extend in a direction crossing the substrate surface?

Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory devices to ensure optimal performance and efficiency.

Original Abstract Submitted

a semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. a surface of the plate, which faces the pillars, has convex portions and non-convex portions.