Kioxia corporation (20240304257). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Yuki Inuzuka of Yokohama Kanagawa (JP)
Hidehiro Shiga of Yokohama Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304257 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of first and second semiconductor pillars, with first and second strings of memory cells connected in series on opposite sides of each pillar. During an erasing operation, different voltages are supplied to the first and second word lines by a driver to erase data in the second and fourth memory cells.
- The semiconductor memory device includes first and second semiconductor pillars.
- First and second strings of memory cells are connected in series on opposite sides of each pillar.
- Different voltages are supplied to the first and second word lines during an erasing operation.
- The driver supplies a higher voltage to the first word lines and a reference voltage to the second word lines.
- This process effectively erases data in the second and fourth memory cells.
Potential Applications: - This technology can be used in various types of semiconductor memory devices. - It can improve the efficiency and performance of memory storage systems.
Problems Solved: - Efficient erasing of data in specific memory cells. - Enhanced control over voltage supply during memory operations.
Benefits: - Improved data management and storage capabilities. - Enhanced performance and reliability of semiconductor memory devices.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Management This technology can be utilized in the development of high-performance memory storage solutions for various industries, including consumer electronics, data centers, and telecommunications.
Questions about Semiconductor Memory Devices: 1. How does the driver in the semiconductor memory device control the voltage supply to different word lines during an erasing operation? The driver supplies a higher voltage to the first word lines and a reference voltage to the second word lines to effectively erase data in specific memory cells.
2. What are the potential advantages of using semiconductor memory devices with multiple strings of memory cells connected in series? Connecting memory cells in series allows for more efficient data storage and management, enhancing the overall performance of the memory device.
Original Abstract Submitted
a semiconductor memory device includes first and second semiconductor pillars, a first string including first memory cells connected in series and a second string including second memory cells connected in series on opposite sides of the first semiconductor pillar, respectively, a third string including third memory cells connected in series and a fourth string including fourth memory cells connected in series, on opposite sides of the second semiconductor pillar, respectively, first word lines, second word lines, and a driver configured to supply different voltages to the first and second word lines during an erasing operation to erase data in the second and fourth memory cells. in the erasing operation, the driver supplies a first voltage higher than a reference voltage to the first word lines, and supplies the reference voltage to the second word lines.
