Kioxia corporation (20240303186). SEMICONDUCTOR STORAGE DEVICE simplified abstract
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Masayuki Akou of Yokohama (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240303186 titled 'SEMICONDUCTOR STORAGE DEVICE
The semiconductor storage device described in the abstract consists of various components such as word lines, memory cell transistors, word line selection transistors, insulating film, and wiring.
- The device includes a first word line connected to a gate of a first memory cell transistor and a second word line connected to a gate of a second memory cell transistor.
- There are word line selection transistors that supply voltage from a voltage supply circuit to the first and second word lines.
- An insulating film is placed between the word line selection transistors to prevent interference.
- A first wiring extends in a first direction on the insulating film, capable of receiving a lower voltage than ground from the voltage supply circuit.
Potential Applications: - This technology can be used in various semiconductor storage devices such as flash memory, SSDs, and other memory systems. - It can enhance the performance and efficiency of data storage devices in electronic devices like smartphones, laptops, and servers.
Problems Solved: - The technology addresses the need for reliable and efficient storage solutions in modern electronic devices. - It solves issues related to voltage supply and interference between components in semiconductor storage devices.
Benefits: - Improved data storage performance and reliability. - Enhanced efficiency and speed in accessing stored information. - Reduction in power consumption and heat generation in electronic devices.
Commercial Applications: - The technology can be applied in the production of high-performance memory devices for consumer electronics, data centers, and other computing systems. - It has the potential to drive innovation in the semiconductor industry and improve the overall user experience with electronic devices.
Questions about the technology: 1. How does the insulating film between the word line selection transistors contribute to the device's performance? 2. What are the specific advantages of using a lower voltage supply in the first wiring of the semiconductor storage device?
Original Abstract Submitted
a semiconductor storage device according to an embodiment includes a first word line connected to a gate of a first memory cell transistor, a second word line connected to a gate of a second memory cell transistor, a first word line selection transistor capable of supplying a voltage from a voltage supply circuit to the first word line, a second word line selection transistor capable of supplying the voltage from the voltage supply circuit to the second word line, an insulating film provided between the first word line selection transistor and the second word line selection transistor, and a first wiring having at least a part provided on the insulating film and extending in a first direction, in which the voltage supply circuit is capable of supplying a first voltage lower than a ground voltage to the first wiring.
