Micron technology, inc. (20240304233). PRE-DECODER CIRCUITRY simplified abstract
Contents
PRE-DECODER CIRCUITRY
Organization Name
Inventor(s)
Jin Seung Son of McKinney TX (US)
Mingdong Cui of Folsom CA (US)
PRE-DECODER CIRCUITRY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304233 titled 'PRE-DECODER CIRCUITRY
The patent application pertains to pre-decoder circuitry in memory arrays, specifically focusing on providing bias conditions for selection signals to memory cells. The circuitry includes n-type transistors with different gate voltages to enable selection of positive and negative memory cell configurations.
- Memory array with multiple memory cells
- Decoder circuitry with n-type transistors for selecting memory cells
- Pre-decoder circuitry providing bias conditions for gate voltages
- Positive voltage for first gate and negative voltage for second gate for positive memory cell configuration
- Zero volts for first gate and negative voltage for second gate for negative memory cell configuration
Potential Applications: - Memory storage devices - Computer systems - Data processing applications
Problems Solved: - Efficient selection of memory cells - Improved memory array performance
Benefits: - Enhanced memory array functionality - Increased data processing speed
Commercial Applications: Title: "Advanced Memory Array Technology for Enhanced Data Processing" This technology can be utilized in various commercial applications such as: - High-performance computing systems - Data centers - Embedded systems
Questions about the technology: 1. How does the pre-decoder circuitry improve memory cell selection efficiency? 2. What are the potential implications of using this technology in data processing applications?
Original Abstract Submitted
the disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. an embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the array and comprising a first and second n-type transistor having a first and second gate, respectively, and pre-decoder circuity to provide a bias condition for the first and second gate to provide a selection signal to one of the cells. the bias condition comprises a positive voltage for the first gate and a negative voltage for the second gate for a positive memory cell configuration, and zero volts for the first gate and the negative voltage for the second gate for a negative memory cell configuration. the pre-decoder circuitry comprises first pre-decoder circuitry to provide the positive voltage for the first gate and the zero volts for the second gate and second pre-decoder circuitry to provide the negative voltage for the second gate.
