Samsung electronics co., ltd. (20240306379). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
CHAN-SIC Yoon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240306379 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a substrate with a cell region and a peripheral region. The cell region contains a cell active pattern, a cell gate structure, and a bit-line structure, while the peripheral region includes a peripheral gate structure with an etch stop layer and a cover dielectric layer.
Key Features and Innovation:
- The semiconductor device features a unique structure with separate cell and peripheral regions.
- The cell region includes a cell active pattern and a cell gate structure for efficient operation.
- The bit-line structure is electrically connected to the cell active pattern for data transmission.
- The peripheral gate structure includes a gate conductive layer and a gate capping layer for peripheral functions.
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as memory storage, data processing, and communication systems.
Problems Solved: The semiconductor device addresses the need for improved performance and functionality in semiconductor technology by providing a specialized structure for efficient operation in both cell and peripheral regions.
Benefits:
- Enhanced performance and functionality in semiconductor devices.
- Improved data transmission and processing capabilities.
- Increased efficiency and reliability in electronic systems.
Commercial Applications: This semiconductor technology can be utilized in the production of high-performance electronic devices for consumer electronics, telecommunications, and computing industries, leading to advancements in data storage and processing capabilities.
Prior Art: Readers interested in exploring prior art related to this technology can refer to research papers, patents, and industry publications on semiconductor device structures and manufacturing processes.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology, particularly in the development of innovative structures and materials for enhanced device performance and functionality.
Questions about Semiconductor Device Technology: 1. What are the key components of a semiconductor device structure? 2. How does the design of the cell and peripheral regions impact the overall performance of the device?
Original Abstract Submitted
a semiconductor device including: a substrate that includes a cell region and a peripheral region, wherein the cell region includes a cell active pattern; a cell gate structure on the cell active pattern; a bit-line structure electrically connected to the cell active pattern; a peripheral gate structure on the peripheral region; a peripheral etch stop layer on the peripheral gate structure; and a cover dielectric layer on the peripheral etch stop layer, wherein the bit-line structure includes: a bit-line conductive layer; a bit-line dielectric layer on the bit-line conductive layer; a cell etch stop layer on the bit-line dielectric layer; and a bit-line capping layer on the cell etch stop layer, wherein the peripheral gate structure includes: a peripheral gate conductive layer; and a peripheral gate capping layer on the peripheral gate conductive layer.
