Samsung electronics co., ltd. (20240306374). SEMICONDUCTOR DEVICES simplified abstract

From WikiPatents
Revision as of 06:43, 12 September 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

KEUNNAM Kim of Suwon-si (KR)

Seungbo Ko of Suwon-si (KR)

Jongmin Kim of Suwon-si (KR)

Huijung Kim of Suwon-si (KR)

Sangjae Park of Suwon-si (KR)

Taejin Park of Suwon-si (KR)

Chansic Yoon of Suwon-si (KR)

Kiseok Lee of Suwon-si (KR)

Myeongdong Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240306374 titled 'SEMICONDUCTOR DEVICES

The semiconductor device described in the abstract includes an active pattern array with active patterns, an isolation pattern, gate structures, bit line structures, and lower and upper contact plugs. The isolation pattern covers the sidewalls of the active patterns, while the gate structures extend through upper portions of the active patterns and the isolation pattern in a first direction. The bit line structures are located on central portions of the active patterns and the isolation pattern, extending in the second direction and spaced apart from each other in the first direction. The lower contact plugs are on the end portions of the active patterns, with the upper contact plugs placed on top of them. The active pattern array consists of active pattern rows with the active patterns spaced apart from each other in the first direction.

  • The semiconductor device features an active pattern array with various components such as active patterns, isolation patterns, gate structures, bit line structures, and contact plugs.
  • The gate structures extend through upper portions of the active patterns and the isolation pattern in a specific direction.
  • The bit line structures are positioned on central portions of the active patterns and the isolation pattern, spaced apart from each other in different directions.
  • Lower contact plugs are located on the end portions of the active patterns, while upper contact plugs are placed on top of them.
  • The active pattern array is organized in rows with active patterns spaced apart from each other in a specific direction.

Potential Applications: - This technology can be utilized in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices such as smartphones, computers, and other consumer electronics.

Problems Solved: - Provides improved isolation and connectivity within the semiconductor device. - Enhances the overall functionality and reliability of the device by optimizing the layout of active patterns and contact plugs.

Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced reliability and functionality of integrated circuits. - Improved manufacturing processes for advanced electronic components.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Applications This technology can be commercially applied in the production of high-performance electronic devices, leading to improved consumer electronics with enhanced functionality and reliability. The market implications include the potential for increased demand for advanced semiconductor components in various industries.

Questions about Semiconductor Device Technology: 1. How does the layout of active patterns and contact plugs impact the overall performance of the semiconductor device? 2. What are the potential applications of this technology in the development of next-generation electronic devices?


Original Abstract Submitted

a semiconductor device includes an active pattern array including active patterns, an isolation pattern, gate structures, bit line structures, and lower and upper contact plugs. the isolation pattern covers sidewalls of the active patterns. the gate structures extend through upper portions of the active patterns and the isolation pattern in a first direction, and are spaced apart from each other in a second direction. the bit line structures are on central portions of the active patterns and the isolation pattern, extend in the second direction, and are spaced apart from each other in the first direction. the lower contact plugs are disposed on end portions of the active patterns. the upper contact plugs are disposed on the lower contact plugs. the active pattern array includes active pattern rows including the active patterns spaced apart from each other in the first direction.