18177397. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Sheng-Siang Ruan of Hsinchu (TW)

Chia-Wen Zhong of Hsinchu (TW)

Tzu-Yu Lin of Hsinchu (TW)

Yao-Wen Chang of Hsinchu (TW)

Ching Ju Yang of Hsinchu (TW)

Chin I Wang of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18177397 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor device described in the patent application consists of a semiconductor substrate, a bottom electrode, a switching layer, a metal ion source layer, and a top electrode. The switching layer contains a compound with aluminum, oxygen, and nitrogen.

• The semiconductor device features a unique switching layer compound with aluminum, oxygen, and nitrogen.
• The device includes a metal ion source layer for enhanced functionality.
• The structure of the device allows for efficient electrical conductivity.
• The bottom electrode provides a stable foundation for the device.
• The top electrode ensures proper electrical contact and performance.

Potential Applications: This technology could be applied in electronic devices, memory storage systems, and semiconductor manufacturing processes.

Problems Solved: The device addresses the need for reliable and efficient semiconductor components with advanced switching capabilities.

Benefits: The semiconductor device offers improved performance, enhanced conductivity, and increased reliability in electronic applications.

Commercial Applications: The technology could be utilized in the production of consumer electronics, data storage devices, and industrial automation systems.

Questions about Semiconductor Devices: 1. How does the compound in the switching layer contribute to the functionality of the semiconductor device? 2. What advantages does the metal ion source layer provide in the operation of the device?

Original Abstract Submitted

A semiconductor device that includes a semiconductor substrate, a bottom electrode over the semiconductor substrate, a switching layer over the bottom electrode, a metal ion source layer over the switching layer, and a top electrode over the metal ion source layer. The switching layer includes a compound having aluminum, oxygen, and nitrogen.