Samsung electronics co., ltd. (20240298438). SEMICONDUCTOR DEVICE simplified abstract
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SEMICONDUCTOR DEVICE
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Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240298438 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with cell active patterns and a dummy active pattern, a cell gate dielectric layer, a cell gate conductive layer, and a bit-line structure.
- The distance between the second cell and dummy active patterns is less than that between the first cell and dummy active patterns.
- The first cell gate conductive layer has a dummy overlap section and a cell overlap section.
- The top surface of the dummy overlap section is higher than that of the cell overlap section.
Potential Applications: - This technology can be used in the fabrication of advanced semiconductor devices for various electronic applications.
Problems Solved: - Provides a more efficient and precise method for fabricating semiconductor devices with improved performance.
Benefits: - Enhanced functionality and performance of semiconductor devices. - Increased efficiency in the fabrication process.
Commercial Applications: - This technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices.
Questions about Semiconductor Devices: 1. How does the distance between the cell active patterns affect the performance of the semiconductor device? 2. What are the advantages of having a dummy overlap section in the cell gate conductive layer?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device fabrication techniques to enhance performance and efficiency.
Original Abstract Submitted
disclosed are semiconductor devices and their fabrication methods. the semiconductor device may include a substrate including first and second cell active patterns and a dummy active pattern, a cell gate dielectric layer on the first and second cell active patterns and the dummy active pattern, a first cell gate conductive layer on the cell gate dielectric layer, and a bit-line structure connected to the first cell active pattern. a distance between the second cell and dummy active patterns is less than that between the first cell and dummy active patterns. the first cell gate conductive layer may include a dummy overlap section overlapping the dummy active pattern and the second cell active pattern, and a cell overlap section overlapping the first cell active pattern. a top surface of the dummy overlap section may be at a level higher than that of a top surface of the cell overlap section.
