International business machines corporation (20240290860). SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS simplified abstract

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS

Organization Name

international business machines corporation

Inventor(s)

Julien Frougier of ALBANY NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

Andrew M. Greene of Slingerlands NY (US)

Andrew Gaul of Halfmoon NY (US)

Ruilong Xie of Niskayuna NY (US)

Shogo Mochizuki of Mechanicville NY (US)

Curtis S. Durfee of Schenectady NY (US)

Eric Miller of ALBANY NY (US)

Ronald Newhart of Lebanon PA (US)

Choudhury Mahboob Ellahi of Halfmoon NY (US)

Anthony I. Chou of Guilderland NY (US)

Susan Ng Emans of ALBANY NY (US)

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290860 titled 'SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS

The semiconductor structure described in the patent application consists of a substrate with a gate-all-around field effect transistor positioned on top. This transistor includes a first source-drain region, a second source-drain region, at least one channel region connecting the two source-drain regions, and a gate structure surrounding the channel region. A self-aligned substrate isolation (SASI) layer is present between the substrate and the gate structure, extending across the width of the gate structure.

• Key Features and Innovation:

- Gate-all-around field effect transistor design - Self-aligned substrate isolation layer for improved performance - Enhanced channel region connectivity between the source-drain regions

• Potential Applications:

- High-performance electronic devices - Advanced semiconductor technology - Integrated circuits for various applications

• Problems Solved:

- Improved isolation between components - Enhanced transistor performance and reliability - Better control over channel region connectivity

• Benefits:

- Increased efficiency and speed of electronic devices - Enhanced overall performance of semiconductor structures - Improved reliability and longevity of integrated circuits

• Commercial Applications:

Title: Advanced Semiconductor Technology for High-Performance Devices Description: This technology can be utilized in the development of cutting-edge electronic devices, leading to faster and more reliable products with a wide range of commercial applications in industries such as telecommunications, computing, and consumer electronics.

• Prior Art:

Readers interested in exploring prior art related to this technology can start by researching gate-all-around field effect transistors, self-aligned substrate isolation layers, and advanced semiconductor design techniques.

• Frequently Updated Research:

Stay updated on the latest advancements in gate-all-around transistor technology, substrate isolation techniques, and semiconductor innovations to ensure the continued relevance and competitiveness of this technology in the market.

Questions about Semiconductor Structure with Gate-All-Around Field Effect Transistor: 1. How does the self-aligned substrate isolation layer contribute to the performance of the transistor? - The self-aligned substrate isolation layer helps improve the isolation between components, leading to enhanced transistor performance and reliability.

2. What are the potential commercial applications of this advanced semiconductor technology? - This technology can be applied in various industries such as telecommunications, computing, and consumer electronics to develop high-performance electronic devices with improved efficiency and reliability.

Original Abstract Submitted

a semiconductor structure includes a substrate and a gate-all-around field effect transistor disposed over the substrate. the gate-all-around field effect transistor includes a first source-drain region; a second source-drain region; at least one channel region interconnecting the first and second source drain regions; and a gate structure surrounding the at least one channel region. a self-aligned substrate isolation (sasi) layer is located between the substrate and the gate structure and extends over a width of the gate structure.