International business machines corporation (20240290713). PASS-THROUGH WIRING IN NOTCHED INTERCONNECT simplified abstract

PASS-THROUGH WIRING IN NOTCHED INTERCONNECT

Organization Name

international business machines corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

REINALDO Vega of Mahopac NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Brent A. Anderson of Jericho VT (US)

PASS-THROUGH WIRING IN NOTCHED INTERCONNECT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290713 titled 'PASS-THROUGH WIRING IN NOTCHED INTERCONNECT

Simplified Explanation: The semiconductor structure in this patent application includes a metal level with a metal strip that has a notch or pass-through filled with dielectric material. A conductive wiring passes vertically through the metal strip, insulated by the dielectric material.

• The semiconductor structure features a metal strip with a notch or pass-through filled with dielectric material.
• A conductive wiring passes through the metal strip vertically, insulated by the dielectric material.
• The innovation allows for efficient vertical wiring within the metal level of the semiconductor structure.
• The dielectric material insulates the conductive wiring from the metal strip, preventing interference.
• This design enhances the performance and reliability of the semiconductor structure.

Potential Applications: 1. Integrated circuits 2. Microprocessors 3. Memory devices

Problems Solved: 1. Interference between wiring and metal strip 2. Efficient vertical wiring in semiconductor structures

Benefits: 1. Improved performance of integrated circuits 2. Enhanced reliability of microprocessors 3. Increased efficiency in memory devices

Commercial Applications: The technology can be utilized in the manufacturing of various electronic devices, such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor production and research.

Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor structures, metal levels, and conductive wiring insulation.

Frequently Updated Research: Researchers in the semiconductor industry are constantly studying new materials and techniques to improve the performance and efficiency of semiconductor structures. Stay updated on the latest advancements in the field to understand the evolving landscape of this technology.

Questions about Semiconductor Structures with Metal Levels: 1. How does the use of dielectric material in the notch or pass-through enhance the performance of the semiconductor structure? 2. What are the potential challenges in implementing vertical wiring within the metal level of a semiconductor structure?

Original Abstract Submitted

embodiments of present invention provide a semiconductor structure. the semiconductor structure includes a metal level, the metal level includes a metal strip including a notch at a side of the metal strip or a pass-through inside the metal strip, wherein the notch or the pass-through is at least partially filled with a dielectric material. the metal level further includes a conductive wiring that vertically passes through the metal strip. the conductive wiring is at least partially inside the notch or inside the pass-through and is insulated from the metal strip by the dielectric material. methods of manufacturing the semiconductor structure are also provided.