International business machines corporation (20240290688). SUPER VIA WITHIN BACKSIDE LEVEL simplified abstract

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SUPER VIA WITHIN BACKSIDE LEVEL

Organization Name

international business machines corporation

Inventor(s)

Tsung-Sheng Kang of Ballston Lake NY (US)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Daniel Charles Edelstein of White Plains NY (US)

SUPER VIA WITHIN BACKSIDE LEVEL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290688 titled 'SUPER VIA WITHIN BACKSIDE LEVEL

Simplified Explanation: The semiconductor IC device described in the patent application features a super via, which consists of a lower skip via and an upper skip via. These components are connected by a connecting wire, with the upper skip via being electrically isolated from surrounding wires by an upper liner, and the lower skip via being isolated by a lower liner. This super via allows for wiring and routing through the backside of the semiconductor IC device, as well as serving as a heat transfer conduit.

  • The semiconductor IC device includes a super via with a lower skip via and an upper skip via.
  • A connecting wire links the lower skip via and upper skip via.
  • The upper skip via is electrically isolated by an upper liner, while the lower skip via is isolated by a lower liner.
  • The super via enables wiring and routing through the backside of the semiconductor IC device.
  • The super via can also function as a heat transfer conduit.

Potential Applications: 1. Advanced semiconductor devices. 2. High-performance computing systems. 3. Power electronics applications. 4. Telecommunications equipment. 5. Automotive electronics.

Problems Solved: 1. Efficient wiring and routing in semiconductor IC devices. 2. Enhanced heat dissipation capabilities. 3. Improved electrical isolation between components. 4. Space-saving design for complex electronic systems. 5. Enhanced reliability and performance of integrated circuits.

Benefits: 1. Increased functionality in a smaller footprint. 2. Improved thermal management. 3. Enhanced signal integrity. 4. Higher reliability and longevity of electronic devices. 5. Potential cost savings in manufacturing and operation.

Commercial Applications: The technology described in the patent application has significant implications for the semiconductor industry, particularly in the development of advanced integrated circuits for various applications such as high-performance computing, telecommunications, and automotive electronics. The improved wiring and heat dissipation capabilities can lead to more efficient and reliable electronic systems, offering a competitive advantage to companies in these sectors.

Questions about Semiconductor IC Device with Super Via: 1. How does the super via in the semiconductor IC device improve heat dissipation? 2. What are the potential cost-saving benefits of utilizing this technology in manufacturing processes?

Frequently Updated Research: Researchers are continually exploring ways to enhance the performance and efficiency of semiconductor devices through innovations like super vias. Stay informed about the latest developments in this field to leverage cutting-edge technology for your applications.


Original Abstract Submitted

a semiconductor ic device includes a super via. the super via includes a lower skip via and an upper skip via. a connecting wire may be directly between or may separate the lower skip via and the upper skip via. the upper skip via may be adequately electrically isolated from a surrounding wire by an upper liner. the lower skip via may be adequately electrically isolated from a surrounding wire by a lower liner. the super via along with the connecting wire may connect a wire in the lowest wiring level with a wire in the highest wiring level. because of the lower liner and/or the upper liner, the super via may be utilized for wiring and routing through a backside level of the semiconductor ic device (e.g., potential or signal routing) and be utilized as a heat transfer conduit through the backside of the semiconductor ic device.