International business machines corporation (20240290657). SELF-ALIGNED CONTACT BASED VIA TO BACKSIDE POWER RAIL simplified abstract

SELF-ALIGNED CONTACT BASED VIA TO BACKSIDE POWER RAIL

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Richard C. Johnson of Selkirk NY (US)

Kisik Choi of Watervliet NY (US)

Ruilong Xie of Niskayuna NY (US)

SELF-ALIGNED CONTACT BASED VIA TO BACKSIDE POWER RAIL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290657 titled 'SELF-ALIGNED CONTACT BASED VIA TO BACKSIDE POWER RAIL

The semiconductor device described in the abstract consists of two nanodevices, a dielectric fill, a dielectric liner, and self-aligned contact (SAC) caps.

• The first nanodevice and the second nanodevice are parallel to each other along the x-axis.
• A dielectric fill is present between the two nanodevices.
• The dielectric liner is made up of a first dielectric liner and a second dielectric liner, with each located between a nanodevice and the dielectric fill.
• The SAC caps consist of a head section and a shaft section, with the head section having a greater width than the shaft section.
• The head section of the SAC caps is in direct contact with the frontside of the dielectric liner.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the field of nanotechnology for creating more efficient and compact devices.

Problems Solved: - The technology addresses the need for precise alignment and contact in semiconductor devices. - It helps in improving the performance and reliability of nanodevices.

Benefits: - Enhanced performance and reliability of semiconductor devices. - Improved efficiency in electronic applications. - Potential for miniaturization and increased functionality.

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronic Applications This technology could be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. The market implications include improved product quality, increased efficiency, and potential cost savings for manufacturers.

Questions about the technology: 1. How does the presence of the dielectric fill and liners impact the performance of the semiconductor device? The dielectric fill and liners help in providing insulation and structural support to the nanodevices, ensuring proper functioning and reliability.

2. What are the advantages of using self-aligned contact caps in semiconductor devices? Self-aligned contact caps facilitate precise alignment and contact between different components, leading to improved performance and reliability in semiconductor devices.

Original Abstract Submitted

according to the embodiment of the present invention, a semiconductor device includes a first nanodevice and a second nanodevice. the second nanodevice is adjacent to and parallel to the first nanodevice along an x-axis. a dielectric fill is located between the first nanodevice and the second nanodevice. a dielectric liner is comprised of a first dielectric liner and a second dielectric liner. the first dielectric liner is located between the first nanodevice and the dielectric fill. the second dielectric liner is located between the second nanodevice and the dielectric fill. a plurality of self-aligned contact (sac) caps is comprised of a head section and a shaft section. the head section extends a first width parallel to the x-axis and is in direct contact with a frontside of the dielectric liner. the shaft section extends a second width parallel to the x-axis. the first width is greater than the second width.