18626719. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM simplified abstract (Tokyo Electron Limited)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Organization Name
Inventor(s)
Takayuki Katsunuma of Miyagi (JP)
Shinya Ishikawa of Miyagi (JP)
Yoshihide Kihara of Miyagi (JP)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18626719 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Simplified Explanation:
This patent application describes a substrate processing apparatus that includes a chamber, a substrate support, a gas supply, and a controller. The controller controls the operation of the apparatus, which involves placing a substrate with an etching layer and a patterned mask on the substrate support, forming a film on the mask, forming a reaction layer on the film, and removing the reaction layer by applying energy. The temperature of the substrate is adjusted based on the thickness of the reaction layer during the process.
- The patent application describes a substrate processing apparatus with a unique process for removing a reaction layer from a substrate.
- The controller in the apparatus manages the overall operation, including adjusting the substrate temperature based on the reaction layer thickness.
- The process involves forming a film and a reaction layer on the substrate before removing the reaction layer with energy application.
Potential Applications:
This technology could be used in semiconductor manufacturing processes, specifically in etching and patterning applications. It may also find applications in thin film deposition and removal processes in various industries.
Problems Solved:
This technology addresses the challenge of efficiently removing reaction layers from substrates without damaging the underlying layers. It also optimizes the process by adjusting the substrate temperature based on the thickness of the reaction layer.
Benefits:
- Improved efficiency in substrate processing - Enhanced control over reaction layer removal - Potential for higher quality and more precise manufacturing processes
Commercial Applications:
Title: Advanced Substrate Processing Apparatus for Semiconductor Manufacturing
This technology could be commercially used in semiconductor fabrication facilities to enhance etching and patterning processes. It could also be valuable in industries requiring precise thin film deposition and removal techniques.
Prior Art:
Further research can be conducted in the field of substrate processing apparatuses, specifically focusing on methods for removing reaction layers from substrates with precision and efficiency.
Frequently Updated Research:
Researchers are constantly exploring new techniques and technologies to improve substrate processing in semiconductor manufacturing and related industries.
Questions about Substrate Processing Apparatus: 1. How does the controller in the substrate processing apparatus optimize the removal of reaction layers? 2. What are the potential applications of this technology beyond semiconductor manufacturing?
Original Abstract Submitted
A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.