18111959. HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES simplified abstract (GlobalFoundries U.S. Inc.)
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
Organization Name
Inventor(s)
Shesh Mani Pandey of Saratoga Springs NY (US)
Sagar Premnath Karalkar of Singapore (SG)
Rajendran Krishnasamy of Essex Junction VT (US)
Chung Foong Tan of Ballston Spa NY (US)
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18111959 titled 'HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
The present disclosure pertains to semiconductor structures, specifically high performance silicon controlled rectifier (SCR) devices, and methods of manufacture. The structure includes a first well and a second well in a semiconductor substrate, with a porous semiconductor region extending in both wells.
- First well and second well in semiconductor substrate
- Porous semiconductor region extending in both wells
- High performance silicon controlled rectifier (SCR) devices
- Methods of manufacture for semiconductor structures
- Enhanced performance and efficiency in SCR devices
Potential Applications: This technology can be applied in power electronics, renewable energy systems, electric vehicles, and industrial automation.
Problems Solved: This innovation addresses the need for high performance and efficient SCR devices in various electronic applications.
Benefits: Improved performance, increased efficiency, and enhanced reliability in semiconductor devices.
Commercial Applications: This technology can be utilized in the manufacturing of power electronics, electric vehicles, renewable energy systems, and industrial automation equipment.
Questions about Semiconductor Structures: 1. What are the key features of high performance silicon controlled rectifier (SCR) devices?
- SCR devices offer enhanced performance and efficiency in various electronic applications.
2. How does the porous semiconductor region contribute to the functionality of the semiconductor structure?
- The porous semiconductor region extends in both wells, improving the overall performance of the SCR devices.
Original Abstract Submitted
The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; and a porous semiconductor region extending in the first well and the second well.