17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE
Organization Name
Inventor(s)
HEE-WOONG Kang of SUWON-SI (KR)
STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17830677 titled 'STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE
Simplified Explanation
The patent application describes a storage device that includes a nonvolatile memory device and a memory controller. The device allows for efficient read operations on memory cells belonging to selected pages in selected memory blocks.
- The memory controller enables the nonvolatile memory device to perform a read operation on memory cells of a selected page in a selected memory block.
- After the read operation, the memory controller allows the nonvolatile memory device to perform a first check read operation on memory cells of a first neighbor page, using sequentially selected sets of read voltages.
- Following the first check read operation, the memory controller enables the nonvolatile memory device to perform a second check read operation on memory cells of a second neighbor page, also using sequentially selected sets of read voltages.
- In the second check read operation, the memory controller first selects a set of read voltages that were used in the first check read operation, where error correction was successful.
Potential applications of this technology:
- Solid-state drives (SSDs)
- Flash memory devices
- Embedded systems
- Mobile devices
Problems solved by this technology:
- Efficient read operations on memory cells
- Error correction in check read operations
- Sequential selection of read voltages
Benefits of this technology:
- Improved performance and reliability of storage devices
- Enhanced error correction capabilities
- Efficient utilization of read voltages in check read operations
Original Abstract Submitted
A storage device includes a nonvolatile memory device and a memory controller allowing the nonvolatile memory device to perform a read operation on memory cells belonging to a selected page in a selected memory block. After the read operation, the memory controller allows the nonvolatile memory device to perform a first check read operation on memory cells of a first neighbor page while sequentially selecting sets of read voltages. After the first check read operation, the memory controller allows the nonvolatile memory device to perform a second check read operation on memory cells of a second neighbor page while sequentially selecting the sets of read voltages. In the second check read operation, the memory controller first selects a set of read voltages, which are used in the first check read operation in which error correction succeeds.
