17805702. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Intak Jeon of Seoul (KR)

Hanjin Lim of Seoul (KR)

Hyungsuk Jung of Suwon-si (KR)

Jaehyoung Choi of Hwaseong-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17805702 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The abstract describes an integrated circuit device that includes a lower electrode, an insulating support pattern, a dielectric film, a high-k interface layer, and an upper electrode. The high-k interface layer includes a zirconium oxide layer and is arranged between the lower electrode and the dielectric film, as well as between the insulating support pattern and the dielectric film.

• The integrated circuit device includes a lower electrode, insulating support pattern, dielectric film, high-k interface layer, and upper electrode.
• The high-k interface layer contains a zirconium oxide layer.
• The high-k interface layer is located between the lower electrode and the dielectric film, as well as between the insulating support pattern and the dielectric film.
• The upper electrode is positioned adjacent to the lower electrode.
• The high-k interface layer and the dielectric film are situated between the upper electrode and the lower electrode.

Potential Applications:

• This integrated circuit device can be used in various electronic devices such as smartphones, computers, and tablets.
• It can be utilized in memory devices, processors, and other components of electronic systems.

Problems Solved:

• The high-k interface layer helps to improve the performance and efficiency of the integrated circuit device.
• It addresses the issue of capacitance and leakage in the device, allowing for better signal transmission and reduced power consumption.

Benefits:

• The use of a zirconium oxide layer in the high-k interface layer enhances the electrical properties of the device.
• The improved performance and efficiency of the integrated circuit device lead to faster and more reliable electronic systems.
• The reduction in power consumption contributes to energy savings and longer battery life in portable devices.

Original Abstract Submitted

An integrated circuit device includes: a lower electrode disposed on a substrate; an insulating support pattern supporting the lower electrode; a dielectric film surrounding the lower electrode and the insulating support pattern; a high-k interface layer arranged between the lower electrode and the dielectric film and between the insulating support pattern and the dielectric film, wherein the high-k interface layer contacts the insulating support pattern and includes a zirconium oxide layer; and an upper electrode disposed adjacent the lower electrode, wherein the high-k interface layer and the dielectric film are disposed between the upper electrode and the lower electrode.