Samsung electronics co., ltd. (20240258396). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sung Hwan Kim of Suwon-si (KR)
Jin Young Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258396 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of gate structures separated on an active pattern, with gate spacers on the sidewalls of the gate electrodes, source/drain patterns between the gate structures, source/drain contacts on the patterns, and contact silicide films between the contacts and patterns. The outer surfaces of the contact silicide films touch the source/drain patterns, while the inner surfaces touch the contacts. The width of the contact silicide films is widest at the top, equal to the width of the source/drain contacts, and parts of the outer surfaces touch the gate spacers.
- Gate structures with gate spacers
- Source/drain patterns and contacts
- Contact silicide films between contacts and patterns
- Maximum width of contact silicide films at the top
- Contact between outer surfaces of silicide films and gate spacers
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Enhancing contact between source/drain patterns and contacts - Improving conductivity in semiconductor devices
Benefits: - Increased efficiency in semiconductor devices - Enhanced performance of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved functionality and reliability in various consumer electronics, telecommunications equipment, and computing devices. The market implications include faster processing speeds, reduced power consumption, and increased durability of semiconductor devices.
Questions about the technology: 1. How does the width of the contact silicide films impact the performance of the semiconductor device? 2. What are the specific advantages of having gate spacers on the sidewalls of the gate electrodes in this semiconductor device design?
Original Abstract Submitted
a semiconductor device may include gate structures spaced apart from each other on an active pattern, where each of the gate structures includes gate spacers on sidewalls of a gate electrode, source/drain patterns between the gate structures, source/drain contacts on the source/drain patterns, and contact silicide films between the source/drain contacts and the source/drain patterns. outer surfaces of the contact silicide films may contact the source/drain patterns and inner surfaces of the contact silicide films may contact the source/drain contacts. a width in a first direction of the contact silicide films may be maximum at the uppermost portions of outer surfaces of the contact silicide films. parts of the outer surfaces of the contact silicide films may contact the gate spacers. the width in the first direction of the uppermost portions of the contact silicide films may be equal to a width in the first direction of the source/drain contacts.
