18624578. THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
Contents
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
Organization Name
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Inventor(s)
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18624578 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
The abstract of the patent application describes a three-dimensional (3D) memory device with specific structural features.
- The device includes a first core region, a second core region, and an isolation region between them.
- A stack in the core regions consists of alternating dielectric and conductor layers.
- Gate line slit structures and top select gate (TSG) cut structures extend through the stack.
- A first isolation structure in the isolation region contacts with the gate line slit structures.
- The TSG cut structures are positioned between the gate line slit structures in a specific direction.
Potential Applications: - This technology can be used in high-density memory storage devices. - It can enhance the performance and efficiency of data storage systems.
Problems Solved: - Addresses the need for increased memory density and performance in electronic devices. - Improves the reliability and speed of data storage operations.
Benefits: - Higher memory capacity in a compact space. - Faster data access and transfer speeds. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: "Innovative 3D Memory Device for High-Density Data Storage" This technology can be applied in smartphones, computers, servers, and other electronic devices requiring efficient and high-capacity memory storage solutions. The market implications include improved product performance, increased data processing speeds, and enhanced user experience.
Questions about 3D Memory Device: 1. How does the 3D memory device differ from traditional memory storage solutions? - The 3D memory device offers higher memory density and improved performance compared to traditional memory storage solutions due to its unique structural design.
2. What are the key advantages of using a 3D memory device in electronic devices? - The key advantages include increased memory capacity, faster data access speeds, and enhanced overall performance, making it ideal for applications requiring high-density data storage.
Original Abstract Submitted
In one aspect, a three-dimensional (3D) memory device includes a first core region, a second core region, and an isolation region between the first and second core regions along a first direction, a stack in the first and second core regions and including alternatingly stacked first dielectric layers and conductor layers, gate line slit structures extending through the stack along a second direction perpendicular to the first direction in the first and second core regions, top select gate (TSG) cut structures extending through a portion of the stack along the second direction, and a first isolation structure extending through the stack along the second direction in the isolation region and contacting with the gate line slit structures. The gate line slit structures and the TSG cut structures extend along the first direction. One of the TSG cut structures is between two of the gate line slit structures along a third direction perpendicular to the first direction and the second direction.
