18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)
Contents
FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL
Organization Name
Inventor(s)
Francois Hebert of San Mateo CA (US)
FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18098999 titled 'FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL
The abstract describes structures for a field-effect transistor and methods of forming such structures. The structure includes a semiconductor substrate with a doped region and a trench, made of wide bandgap semiconductor material, as well as a gate structure with a gate conductor layer.
- The structure comprises a semiconductor substrate with a doped region and a trench.
- The semiconductor substrate is made of wide bandgap semiconductor material.
- The gate structure includes a gate conductor layer with a first portion above the substrate surface and a second portion inside the trench.
Potential Applications: - Power electronics - High-frequency applications - RF amplifiers
Problems Solved: - Improved performance in high-power and high-frequency applications - Enhanced efficiency in RF amplifiers
Benefits: - Higher power handling capability - Increased efficiency - Better performance in high-frequency applications
Commercial Applications: Title: Advanced Field-Effect Transistors for Power Electronics This technology can be used in power electronics, RF amplifiers, and high-frequency applications, with implications for industries such as telecommunications, aerospace, and automotive.
Questions about Field-Effect Transistors: 1. How do field-effect transistors differ from other types of transistors? Field-effect transistors control the flow of current using an electric field, unlike bipolar transistors that rely on current carriers. 2. What are the advantages of using wide bandgap semiconductor materials in field-effect transistors? Wide bandgap materials offer higher breakdown voltages and better thermal conductivity, making them suitable for high-power and high-frequency applications.
Original Abstract Submitted
Structures for a field-effect transistor and methods of forming such structures. The structure comprises a semiconductor substrate including a top surface, a doped region adjacent to the top surface, and a trench that extends through the doped region. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate structure including a gate conductor layer. The gate conductor layer has a first portion disposed above the top surface of the semiconductor substrate and a second portion disposed inside the trench below the top surface of the semiconductor substrate.
