18356851. HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME simplified abstract (SanDisk Technologies LLC)
Contents
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME
Organization Name
Inventor(s)
Masashi Ishida of Yokkaichi (JP)
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356851 titled 'HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME
The abstract describes a field-effect transistor with various regions and structures to enhance its performance.
- The transistor includes a semiconductor channel with a first conductivity type doping.
- It has a gate structure, a source region, and a drain region.
- Source-side extension region and drain-side extension region with plate portions and rail portions are present.
- Source-side counter-doped rails and drain-side counter-doped rails are interlaced with extension rail portions.
- Superjunction structures are provided between the counter-doped rails and extension regions.
Potential Applications: - Power electronics - Integrated circuits - Electronic devices requiring high-performance transistors
Problems Solved: - Improved efficiency and performance of field-effect transistors - Enhanced power handling capabilities
Benefits: - Higher power density - Lower on-state resistance - Better overall transistor performance
Commercial Applications: Title: "High-Performance Field-Effect Transistor for Power Electronics Applications" This technology can be used in power supplies, motor control systems, and renewable energy applications, among others. It can lead to more efficient and compact electronic devices, benefiting industries such as automotive, telecommunications, and consumer electronics.
Prior Art: Readers can explore prior patents related to field-effect transistors, superjunction structures, and power semiconductor devices to understand the evolution of this technology.
Frequently Updated Research: Researchers are continually exploring ways to optimize superjunction structures and improve the performance of field-effect transistors for various applications.
Questions about Field-Effect Transistors: 1. What are the key advantages of using superjunction structures in field-effect transistors? Superjunction structures help distribute the electric field more evenly, reducing on-state resistance and improving overall transistor performance.
2. How do field-effect transistors differ from other types of transistors? Field-effect transistors control the flow of current using an electric field, unlike bipolar junction transistors that rely on current carriers.
Original Abstract Submitted
A field effect transistor includes a semiconductor channel having a doping of a first conductivity type, a gate structure overlying the semiconductor channel, a source region and a drain region, a source-side extension region including a source-side-extension plate portion and source-side-extension rail portions that overlie the source-side-extension plate portion, source-side counter-doped rails having a doping of the first conductivity type, a drain-side extension region including a drain-side-extension plate portion and drain-side-extension rail portions that overlie the drain-side-extension plate portion, and drain-side counter-doped rails interlaced with the drain-side-extension rail portions. A first superjunction structure is provided between the source-side counter-doped rails and the source-side extension region. A second superjunction structure is provided between the drain-side counter-doped rails and the drain-side extension region.
