18358702. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION simplified abstract (SanDisk Technologies LLC)

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION

Organization Name

SanDisk Technologies LLC

Inventor(s)

Ruogu Matthew Zhu of San Jose CA (US)

Koichi Matsuno of Fremont CA (US)

Seyyed Ehsan Esfahani Rashidi of Milpitas CA (US)

Jixin Yu of Milpitas CA (US)

Johann Alsmeier of San Jose CA (US)

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358702 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION

The memory device described in the abstract consists of alternating stacks of insulating layers and electrically conductive layers, with memory stack structures vertically extending through these stacks. A layer contact via structure contacts the top surface of one of the electrically conductive layers, surrounded laterally by dielectric spacers and optionally dielectric support pillar structures. The layer contact via structure may also include a convex surface segment adjoined to a straight sidewall segment.

• Memory device with alternating stacks of insulating and conductive layers
• Memory stack structures vertically extending through the stacks
• Layer contact via structure contacting top surface of conductive layer
• Surrounded by dielectric spacers and optionally support pillar structures
• Layer contact via structure may have convex surface segment

Potential Applications

The technology could be used in various memory devices, such as non-volatile memory, to improve performance and reliability.

Problems Solved

This innovation addresses the need for efficient and reliable memory devices with improved contact structures.

Benefits

The benefits of this technology include enhanced performance, increased reliability, and potentially reduced power consumption in memory devices.

Commercial Applications

Title: Advanced Memory Devices for Enhanced Performance This technology could have commercial applications in the semiconductor industry for the development of high-performance memory devices.

Prior Art

Readers can explore prior art related to memory device structures, contact vias, and memory stack configurations in semiconductor technologies.

Frequently Updated Research

Researchers are continually exploring new materials and designs to further enhance the performance and efficiency of memory devices.

Questions about Memory Device Technology

1. How does the layer contact via structure improve the performance of memory devices? 2. What are the potential challenges in implementing this technology in commercial memory devices?

Original Abstract Submitted

A memory device includes at least one alternating stack of respective insulating layers and respective electrically conductive layers and memory stack structures vertically extending through the at least one alternating stack. A layer contact via structure contacts a top surface of one of the electrically conductive layers, and is laterally surrounded by at least one dielectric spacer, which may include a plurality of dielectric spacers, and optionally by a plurality of dielectric support pillar structures. Additionally or alternatively, the layer contact via structure may comprise a convex surface segment that is adjoined to a straight sidewall segment.