18409885. DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW SURFACE ROUGHNESS simplified abstract (Infineon Technologies Austria AG)

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DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW SURFACE ROUGHNESS

Organization Name

Infineon Technologies Austria AG

Inventor(s)

[[:Category:Clemens R�ssler of Villach (AT)|Clemens R�ssler of Villach (AT)]][[Category:Clemens R�ssler of Villach (AT)]]

Fabian Anmasser of Spittal an der Drau (AT)

Eva-Maria Andrea Gritsch of Spittal an der Drau (AT)

Christoph Gruber of Wernberg (AT)

DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW SURFACE ROUGHNESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18409885 titled 'DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW SURFACE ROUGHNESS

Simplified Explanation:

This patent application describes a micro-fabricated device for controlling trapped ions, which includes a structured electrode layer formed of a multilayer stack to trap ions in a space above it.

Key Features and Innovation:

  • Device for controlling trapped ions
  • Structured electrode layer with a multilayer stack
  • Top layer with a mean surface roughness of Ra=5 nm or less

Potential Applications: The technology can be used in:

  • Quantum computing
  • Ion trapping experiments
  • Precision measurement devices

Problems Solved:

  • Precise control of trapped ions
  • Enhanced stability in ion trapping experiments

Benefits:

  • Improved accuracy in quantum computing
  • Higher precision in measurement devices
  • Increased efficiency in ion trapping experiments

Commercial Applications: The technology can be applied in industries such as:

  • Semiconductor manufacturing
  • Scientific research institutions
  • Aerospace technology development

Prior Art: Readers can explore prior research on ion trapping technologies and micro-fabricated devices in the field of quantum computing and precision measurement.

Frequently Updated Research: Stay updated on advancements in ion trapping technologies and micro-fabrication techniques for controlling trapped ions.

Questions about Trapped Ions: 1. How does the mean surface roughness of the top layer affect the trapping of ions? 2. What are the potential challenges in scaling up this technology for industrial applications?


Original Abstract Submitted

A micro-fabricated device for controlling trapped ions includes a substrate. A structured electrode layer is disposed over the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive smoothing layer having a planarized surface and an electrically conductive top layer disposed over the planarized surface of the smoothing layer. The top layer provides an exposed surface of the structured electrode layer, the exposed surface having a mean surface roughness equal to or less than Ra=5 nm.

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