18156417. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Wen-Chieh Wang of Taoyuan City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156417 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure outlines a method for manufacturing a semiconductor device involving the formation of multiple layers and openings on a substrate.
- Formation of supporting layers and mold layers on the substrate.
- Creation of first and second openings to expose the mold layers.
- Filling the second openings with mold material.
- Formation of trenches to expose the substrate.
- Conformal deposition of a conductive layer in the trenches.
- Removal of mold material and mold layers.
Potential Applications: - Semiconductor manufacturing industry - Electronics industry
Problems Solved: - Efficient fabrication of semiconductor devices - Precise patterning of layers
Benefits: - Improved device performance - Enhanced manufacturing process efficiency
Commercial Applications: - Semiconductor fabrication companies - Electronics manufacturers
Questions about the Method: 1. How does the method improve the performance of semiconductor devices? 2. What are the key advantages of using this manufacturing technique?
Frequently Updated Research: - Ongoing advancements in semiconductor manufacturing techniques.
Original Abstract Submitted
The present disclosure provides a method of manufacturing a semiconductor device. The method includes: sequentially forming a first supporting layer, a first mold layer, and a second supporting layer on a surface of a substrate; forming a plurality of first openings on the second supporting layer to expose the first mold layer; sequentially forming a second mold layer and a third supporting layer on the second supporting layer including the first openings; forming a plurality of second openings on the third supporting layer to expose the second mold layer; filling a mold material in the second openings; forming a plurality of trenches to expose the substrate, and the trenches are separated from the second openings; conformally forming a conductive layer on inner sidewalls of the trenches; and removing the mold material, the second mold layer, and the first mold layer.
