18693977. LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CRYSTALLINE OXIDE FILM simplified abstract (Shin-Etsu Chemical Co., Ltd.)
Contents
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CRYSTALLINE OXIDE FILM
Organization Name
Inventor(s)
Takenori Watabe of Annaka-shi (JP)
Hiroshi Hashigami of Annaka-shi (JP)
Takahiro Sakatsume of Takasaki-shi (JP)
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CRYSTALLINE OXIDE FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18693977 titled 'LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CRYSTALLINE OXIDE FILM
The patent application describes a laminated structure with a crystalline oxide film containing gallium oxide as the main component, exhibiting a reflectance of 16% or greater for light with a wavelength of 400 to 800 nm.
- The laminated structure has excellent crystallinity and semiconductor properties due to the extremely low crystal defects in the gallium oxide film.
- The technology offers improved performance when applied to semiconductor devices.
- The innovation provides a reliable and efficient solution for creating high-quality crystalline oxide films.
Potential Applications: The technology can be used in the manufacturing of semiconductor devices, optical coatings, and other electronic applications requiring high-quality crystalline oxide films.
Problems Solved: The technology addresses the challenge of producing crystalline oxide films with few crystal defects and excellent semiconductor properties.
Benefits: The laminated structure offers enhanced performance, reliability, and efficiency in semiconductor devices and other electronic applications.
Commercial Applications: "High-Performance Crystalline Oxide Films for Semiconductor Devices: Market Implications and Potential Commercial Uses"
Frequently Updated Research: Researchers are continually exploring new methods to further improve the crystallinity and semiconductor properties of gallium oxide films for various applications.
Questions about the technology: 1. How does the reflectance of the crystalline oxide film impact its performance in semiconductor devices? 2. What are the key factors influencing the crystallinity of gallium oxide films in the laminated structure?
Original Abstract Submitted
A laminated structure having at least a base substrate and a crystalline oxide film containing gallium oxide as a main component, wherein an average value of reflectance of light having a wavelength of 400 to 800 nm is 16% or greater on a surface on a side of the crystalline oxide film of the laminated structure. Thus, the invention provides a laminated structure having a crystalline oxide film containing gallium oxide as a main component with extremely few crystal defects, excellent crystallinity, and excellent semiconductor properties when applied to a semiconductor device.
