18287939. LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE simplified abstract (Shin-Etsu Chemical Co., Ltd.)
Contents
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE
Organization Name
Inventor(s)
Takenori Watabe of Annaka-shi (JP)
Hiroshi Hashigami of Annaka-shi (JP)
Takahiro Sakatsume of Takasaki-shi (JP)
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18287939 titled 'LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE
Simplified Explanation: The patent application describes a laminated structure with a ground substrate coated with a crystalline oxide film containing gallium oxide as the main component. The surface of the film has a roughness of 0.2 μm or less, and the ground substrate has a diameter of 50 mm or more with a TTV of 30 μm or less.
Key Features and Innovation:
- Laminated structure with a ground substrate and a crystalline oxide film
- Gallium oxide as the main component of the film
- Low roughness on the surface of the film
- Large diameter ground substrate
- Tight TTV specifications for the ground substrate
Potential Applications: This technology could be used in:
- Optoelectronic devices
- Semiconductor manufacturing
- Solar panels
- Optical coatings
Problems Solved:
- Improved surface quality for better device performance
- Enhanced durability and reliability
- Consistent dimensions for manufacturing precision
Benefits:
- Higher quality optoelectronic devices
- Increased efficiency in semiconductor production
- Longer-lasting solar panels
- Improved optical performance
Commercial Applications: Potential commercial uses include:
- Optoelectronics industry
- Semiconductor fabrication companies
- Solar energy sector
- Optical equipment manufacturers
Questions about the Technology: 1. What are the specific advantages of using gallium oxide in the crystalline oxide film? 2. How does the low roughness on the film surface impact device performance?
Frequently Updated Research: Stay updated on the latest advancements in:
- Gallium oxide applications in optoelectronics
- Surface engineering for semiconductor devices
Original Abstract Submitted
A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 μm or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 μm or less.
