18505485. Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank simplified abstract (Shin-Etsu Chemical Co., Ltd.)
Contents
- 1 Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Reflective Mask Blanks
- 1.13 Original Abstract Submitted
Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank
Organization Name
Inventor(s)
Tsuneo Terasawa of Joetsu-shi (JP)
Hideo Kaneko of Joetsu-shi (JP)
Yukio Inazuki of Joetsu-shi (JP)
Takuro Kosaka of Joetsu-shi (JP)
Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank - A simplified explanation of the abstract
This abstract first appeared for US patent application 18505485 titled 'Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank
Simplified Explanation
The patent application describes a substrate with a film for a reflective mask blank, including layers of Mo and Si, as well as a Ru protection film.
- The substrate and blank have mixing layers of Mo and Si between the Mo and Si layers.
- Another mixing layer of Ru and Si forms between the uppermost Si layer and the Ru protection film.
- The film and layers have specific thicknesses as per defined expressions.
Key Features and Innovation
- Substrate with a film for a reflective mask blank.
- Multilayer reflection film of Mo layers and Si layers.
- Ru protection film.
- Mixing layers of Mo and Si, and Ru and Si.
- Specific thicknesses of film and layers.
Potential Applications
The technology can be used in the manufacturing of reflective mask blanks for semiconductor lithography processes.
Problems Solved
- Enhanced reflectivity for improved lithography processes.
- Protection of underlying layers from damage.
Benefits
- Improved performance in semiconductor manufacturing.
- Increased durability and longevity of reflective mask blanks.
Commercial Applications
Title: Advanced Reflective Mask Blanks for Semiconductor Lithography This technology can be utilized in the semiconductor industry for the production of high-quality reflective mask blanks, leading to enhanced semiconductor manufacturing processes and improved chip performance.
Prior Art
Readers can explore prior patents related to reflective mask blanks, multilayer reflection films, and protective coatings in semiconductor manufacturing.
Frequently Updated Research
Stay updated on the latest advancements in reflective mask blank technology, multilayer film coatings, and semiconductor lithography processes.
Questions about Reflective Mask Blanks
How do reflective mask blanks impact semiconductor manufacturing processes?
Reflective mask blanks play a crucial role in semiconductor lithography by enhancing the precision and quality of chip production.
What are the key components of a reflective mask blank?
A reflective mask blank consists of a substrate, multilayer reflection film, and a protective coating, all working together to improve lithography processes.
Original Abstract Submitted
A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.
