18596742. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Nobuaki Okada of Kawasaki Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18596742 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of various layers including wiring layers, memory cell array layers, and conductive layers.
- The memory cell array layer contains multiple third conductive layers, a semiconductor layer, and an electric charge accumulating layer.
- The second wiring layer includes a fourth conductive layer connected to the semiconductor layer and a fifth conductive layer connected to the first wiring layer.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems and servers for efficient memory management.
Problems Solved: - Enhances memory storage capacity and speed in electronic devices. - Improves overall performance and reliability of semiconductor memory devices.
Benefits: - Increased data storage capacity. - Faster data access and retrieval. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: Semiconductor Memory Device for Enhanced Data Storage This technology can be utilized in the production of consumer electronics, data centers, and other digital devices to improve memory capabilities and performance.
Questions about Semiconductor Memory Device: 1. How does this technology improve data storage in electronic devices? - This technology enhances data storage capacity and speed, leading to improved performance in electronic devices.
2. What are the potential applications of this semiconductor memory device? - The semiconductor memory device can be used in various electronic devices, data storage systems, and servers to enhance memory management and performance.
Original Abstract Submitted
A semiconductor memory device includes: a substrate; a first wiring layer including a first conductive layer and a second conductive layer; a second wiring layer disposed between the substrate and the first wiring layer; and a memory cell array layer disposed between the substrate and the second wiring layer. The memory cell array layer includes: a plurality of third conductive layers arranged in a first direction intersecting with a surface of the substrate; a semiconductor layer extending in the first direction and opposed to the plurality of third conductive layers; and an electric charge accumulating layer disposed between the plurality of third conductive layers and the semiconductor layer. The second wiring layer includes: a fourth conductive layer connected to one end portion of the semiconductor layer in the first direction; and a fifth conductive layer opposed to the first conductive layer and electrically connected to the second conductive layer.
