18594462. DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE simplified abstract (Japan Display Inc.)
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
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DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18594462 titled 'DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
The abstract describes a display device with a transistor and a display element, where the transistor has a gate electrode, a gate insulating layer, and source/drain electrodes containing nitrogen and oxygen.
- The display device includes a transistor with a gate electrode, gate insulating layer, and source/drain electrodes.
- The source/drain electrodes consist of a first conductive layer containing nitrogen and a second conductive layer.
- An insulating layer with oxygen is present on the oxide semiconductor layer and the source/drain electrodes.
Potential Applications: - This technology can be used in the manufacturing of high-resolution displays for electronic devices. - It may find applications in the development of advanced touchscreens and flexible displays.
Problems Solved: - Enhances the performance and efficiency of display devices. - Improves the conductivity and durability of the source/drain electrodes.
Benefits: - Increased display quality and resolution. - Enhanced durability and longevity of display devices.
Commercial Applications: Title: Advanced Display Technology for Electronic Devices This technology can be utilized in the production of smartphones, tablets, laptops, and other electronic devices with high-quality displays. It can also cater to the growing demand for flexible and durable display solutions in the consumer electronics market.
Prior Art: Readers can explore prior patents related to display devices, transistors, and source/drain electrodes to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Stay updated on the latest research and developments in display technology, semiconductor materials, and electrode design to keep abreast of advancements in the industry.
Questions about Display Device Technology: 1. How does the presence of nitrogen and oxygen in the source/drain electrodes impact the performance of the display device? 2. What are the potential challenges in scaling up this technology for mass production?
Original Abstract Submitted
A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.