MEMORY DEVICE AND PROGRAM METHOD THEREOF

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hanjun Lee of Seoul (KR)

Byungsoo Kim of Anyang-Si (KR)

Sangwan Nam of Hwaseong-si (KR)

MEMORY DEVICE AND PROGRAM METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17817408 titled 'MEMORY DEVICE AND PROGRAM METHOD THEREOF

Simplified Explanation

The patent application describes a program method for a memory device. Here are the key points:

The method involves applying different voltages to bit lines and a common source line (CSL).
A program loop is performed on ground selection lines (GSLs) between a specific bit line and the CSL.
The program loop is executed on both completed cells (already programmed) and target cells (to be programmed).

Potential applications of this technology:

Memory devices: This method can be applied to various types of memory devices, such as flash memory or non-volatile memory.
Data storage: The technology can be used in devices that require high-density data storage, such as smartphones, tablets, or solid-state drives.

Problems solved by this technology:

Efficient programming: The method allows for efficient programming of memory cells by applying specific voltages to different lines.
Reliable data storage: By performing the program loop on both completed and target cells, the technology ensures reliable data storage and retrieval.

Benefits of this technology:

Faster programming: The method enables faster programming of memory cells, improving the overall performance of the memory device.
Enhanced data integrity: By performing the program loop on completed cells, any potential errors or inconsistencies can be identified and corrected, ensuring data integrity.
Cost-effective: The technology provides an efficient and cost-effective solution for programming memory cells, reducing manufacturing costs.

Original Abstract Submitted

A program method includes applying a first voltage to a plurality of bit lines, applying a second voltage to a common source line (CSL), and performing a program loop by applying a program voltage and a verify voltage to each of a plurality of ground selection lines (GSLs) positioned between one bit line among the plurality of bit lines and the CSL. The program loop is performed on both a program completed cell in which a program is completed by applying the program voltage and a program target cell.