17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Panjae Park of Seoul (KR)

Subin Choi of Suwon-si (KR)

Chulhong Park of Seongnam-si (KR)

SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838551 titled 'SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES

Simplified Explanation

The patent application describes a semiconductor device with a specific structure and layout of components. Here is a simplified explanation of the abstract:

• The semiconductor device has an active region on a substrate, a gate electrode, a contact structure, and vias.
• The active region extends in one direction on the substrate.
• The gate electrode intersects the active region and extends in a perpendicular direction.
• The contact structure is located on one side of the gate electrode and extends in the same perpendicular direction.
• A first via is connected to the contact structure and has a longer length in the perpendicular direction than in the other direction.
• A plurality of first metal interconnections are provided on the first via, extending in the same direction as the active region.
• A second via is connected to the first metal interconnections and has a longer length in the perpendicular direction than in the other direction.

Potential applications of this technology:

• Semiconductor devices with improved performance and functionality.
• Integrated circuits with optimized layout and connectivity.
• Electronics for various industries such as consumer electronics, telecommunications, and automotive.

Problems solved by this technology:

• Efficient routing of electrical signals in a semiconductor device.
• Reduction of signal interference and noise.
• Enhanced integration and miniaturization of electronic components.

Benefits of this technology:

• Improved performance and reliability of semiconductor devices.
• Enhanced functionality and connectivity.
• Higher efficiency and reduced power consumption.
• Cost-effective manufacturing processes.

Original Abstract Submitted

A semiconductor device includes an active region extending on a substrate in a first direction, a gate electrode intersecting the active region and extending in a second direction, perpendicular to the first direction, a contact structure disposed on the active region on one side of the gate electrode and extending in the second direction, and a first via disposed on the contact structure to be connected to the contact structure and has a shape in which a length in the second direction is greater than a length in the first direction. A plurality of first metal interconnections are provided, which extend in the first direction on the first via, and are connected to the first via. A second via is provided, which is disposed on the plurality of first metal interconnections to be connected to the plurality of first metal interconnections and has a shape in which a length in the second direction is greater than a length in the first direction.