Taiwan semiconductor manufacturing co., ltd. (20240250020). VIA FOR SEMICONDUCTOR DEVICE CONNECTION simplified abstract
Contents
VIA FOR SEMICONDUCTOR DEVICE CONNECTION
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
An-Jhih Su of Taoyuan City (TW)
Wen-Chih Chiou of Zhunan Township (TW)
Der-Chyang Yeh of Hsinchu (TW)
Ming Shih Yeh of Zhubei City (TW)
VIA FOR SEMICONDUCTOR DEVICE CONNECTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240250020 titled 'VIA FOR SEMICONDUCTOR DEVICE CONNECTION
Simplified Explanation: The patent application describes a method for forming a via in a semiconductor device, involving bonding terminals of substrates, separating the substrates, filling a gap with material, and creating a conductive via to connect components.
Key Features and Innovation:
- Method for forming a via in a semiconductor device
- Bonding terminals of substrates
- Separating substrates to create component devices
- Filling a gap with material
- Creating a conductive via to connect components
Potential Applications: This technology can be applied in the semiconductor industry for the fabrication of advanced electronic devices, integrated circuits, and microprocessors.
Problems Solved: This technology addresses the need for efficient and reliable methods of forming vias in semiconductor devices to ensure proper connectivity between components.
Benefits:
- Improved connectivity in semiconductor devices
- Enhanced performance of electronic components
- Increased reliability of integrated circuits
Commercial Applications: The technology can be utilized in the production of high-performance electronic devices, leading to advancements in telecommunications, computing, and consumer electronics markets.
Prior Art: Prior art related to this technology can be found in patents and research papers focusing on semiconductor device fabrication and interconnect technologies.
Frequently Updated Research: Ongoing research in the semiconductor industry continues to explore new materials and methods for enhancing the performance and efficiency of semiconductor devices.
Questions about Semiconductor Device Via Formation: 1. How does the method of forming a via in a semiconductor device improve connectivity between components? 2. What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
Original Abstract Submitted
a method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. in an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.
- Taiwan semiconductor manufacturing co., ltd.
- Chen-Hua Yu of Hsinchu (TW)
- An-Jhih Su of Taoyuan City (TW)
- Chi-Hsi Wu of Hsinchu (TW)
- Wen-Chih Chiou of Zhunan Township (TW)
- Tsang-Jiuh Wu of Hsinchu (TW)
- Der-Chyang Yeh of Hsinchu (TW)
- Ming Shih Yeh of Zhubei City (TW)
- H01L23/522
- H01L21/02
- H01L21/033
- H01L21/3105
- H01L21/311
- H01L21/321
- H01L21/56
- H01L21/683
- H01L21/768
- H01L23/00
- H01L23/528
- H01L23/538
- H01L25/07
- H01L25/075
- H01L33/00
- H01L33/06
- H01L33/32
- H01L33/38
- H01L33/62
- CPC H01L23/5226