17808705. Semiconductor Packages and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Semiconductor Packages and Methods of Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Semiconductor Packages and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 17808705 titled 'Semiconductor Packages and Methods of Forming the Same
Simplified Explanation
The abstract describes a method for bonding semiconductor dies to a substrate and filling the gap between them with a thermally conductive material. A dielectric layer is then deposited over the dies and the conductive region.
- The method involves bonding semiconductor dies to a substrate.
- A gap is left between the dies.
- The gap is filled with a metal material to create a thermally conductive region.
- A dielectric layer is deposited over the dies and the conductive region.
Potential Applications
- This technology can be used in the manufacturing of electronic devices such as integrated circuits and microprocessors.
- It can improve the thermal management of these devices, allowing for better heat dissipation and potentially increasing their performance and reliability.
Problems Solved
- The method solves the problem of heat buildup in semiconductor devices by providing a thermally conductive region between the dies.
- It addresses the challenge of bonding multiple dies to a substrate while maintaining thermal efficiency.
Benefits
- The use of a thermally conductive region improves the heat dissipation capabilities of the semiconductor device.
- The method allows for efficient bonding of multiple dies to a substrate, enabling the integration of complex electronic systems.
- It can enhance the overall performance and reliability of electronic devices by reducing the risk of overheating.
Original Abstract Submitted
A method includes bonding a first semiconductor die to a semiconductor substrate; bonding a second semiconductor die to the semiconductor substrate, wherein the second semiconductor die is laterally separated from the first semiconductor die by a gap; filling the gap between the first semiconductor die and the second semiconductor die with a metal material to form a thermally conductive region; and depositing a first dielectric layer over the first semiconductor die, the second semiconductor die, and the thermally conductive region.
