18336497. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seokcheon Baek of Suwon-si (KR)

Seongjun Seo of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18336497 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate with a memory cell region and a connection region. It also includes gate electrodes in the memory cell region, a pair of gate stack separation insulation layers, and a pad structure in the connection region.

• The semiconductor device includes gate electrodes arranged in a vertical direction, including a ground selection line and multiple word lines.
• The gate stack separation insulation layers pass through the gate electrodes and extend in a horizontal direction.
• The pad structure in the connection region includes multiple pad layers connected to the gate electrodes.
• The pad layers are arranged in a staircase shape in both horizontal directions.
• The ground selection line includes multiple cut regions that are apart from the edges of the pad layers.

Potential applications of this technology:

• Memory devices: The semiconductor device can be used in memory devices such as flash memory or DRAM.
• Integrated circuits: It can be utilized in various integrated circuits that require memory cell regions and connection regions.

Problems solved by this technology:

• Efficient layout: The staircase arrangement of the pad layers allows for a compact and efficient layout of the semiconductor device.
• Gate stack separation: The gate stack separation insulation layers ensure proper isolation between the gate electrodes.

Benefits of this technology:

• Space-saving: The compact layout of the pad layers saves space on the semiconductor device.
• Improved performance: The proper isolation between gate electrodes enhances the performance and reliability of the device.

Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and arranged apart from one another in a vertical direction, the gate electrodes including a ground selection line and a plurality of word lines, a pair of gate stack separation insulation layers passing through the gate electrodes and extending in a first horizontal direction in the memory cell region and the connection region, and a pad structure including a plurality of pad layers in the connection region, connected to respective ones of the gate electrodes, arranged in a staircase shape in the first horizontal direction and in a second horizontal direction, the ground selection line including a plurality of ground selection line cut regions each being apart from edges of the pad layers in the second horizontal direction.