18109442. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Chan-Sic Yoon of Suwon-si (KR)
Myeong-Dong Lee of Suwon-si (KR)
Wooyoung Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18109442 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a cell active pattern, a gate structure, a bit-line contact, a connection pattern, and a cell separation pattern.
- The cell active pattern consists of two portions that are spaced apart from each other.
- The gate structure is located between the two portions of the cell active pattern.
- The bit-line contact is positioned on the first portion of the cell active pattern.
- The connection pattern is located on the second portion of the cell active pattern.
- The cell separation pattern is in contact with both the bit-line contact and the connection pattern.
- The cell separation pattern has two sidewalls, with the first sidewall in contact with the connection pattern and the second sidewall in contact with the bit-line contact.
- The upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, while the lower portion is spaced apart from the bit-line contact.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit design
- Memory devices
Problems solved by this technology:
- Provides a structure for efficient cell separation in a semiconductor device
- Helps to prevent interference between different portions of the cell active pattern
Benefits of this technology:
- Improved performance and reliability of semiconductor devices
- Enhanced manufacturing efficiency and yield
Original Abstract Submitted
A semiconductor device includes a cell active pattern including a first portion and a second portion that are spaced apart from each other; a gate structure between the first portion and the second portion of the cell active pattern; a bit-line contact on the first portion of the cell active pattern; a connection pattern on the second portion of the cell active pattern; and a cell separation pattern in contact with the bit-line contact and the connection pattern, wherein the cell separation pattern includes a first sidewall in contact with the connection pattern and a second sidewall in contact with the bit-line contact, an upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, and a lower portion of the second sidewall of the cell separation pattern is spaced apart from the bit-line contact.
- SAMSUNG ELECTRONICS CO., LTD.
- Kiseok Lee of Suwon-si (KR)
- Jongmin Kim of Suwon-si (KR)
- Hyo-Sub Kim of Suwon-si (KR)
- Hui-Jung Kim of Suwon-si (KR)
- Sohyun Park of Suwon-si (KR)
- Junhyeok Ahn of Suwon-si (KR)
- Chan-Sic Yoon of Suwon-si (KR)
- Myeong-Dong Lee of Suwon-si (KR)
- Woojin Jeong of Suwon-si (KR)
- Wooyoung Choi of Suwon-si (KR)
- H10B12/00