Sk hynix inc. (20240243152). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jeong Mook Choi of Icheon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243152 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The abstract describes a method of manufacturing a semiconductor device involving several key steps.
- Forming a first metal layer
- Forming a conductive layer on the first metal layer
- Forming a capping layer on the conductive layer
- Etching the first metal layer, the conductive layer, and the capping layer
- Depositing a bonding oxide layer
- Etching the bonding oxide layer and the capping layer
- Forming a first bonding metal layer in an etched space
- Forming a second metal layer on the first bonding metal layer
Key Features and Innovation: - The method involves multiple layers and etching processes to create a semiconductor device. - The use of bonding oxide layer and bonding metal layer enhances the device's performance.
Potential Applications: - This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits and microprocessors.
Problems Solved: - The method addresses the need for precise layering and bonding in semiconductor device manufacturing.
Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced efficiency in the manufacturing process.
Commercial Applications: - This technology can be utilized by semiconductor companies for producing advanced electronic components.
Questions about the technology: 1. How does the use of multiple layers improve the performance of semiconductor devices? 2. What are the specific advantages of incorporating a bonding oxide layer in the manufacturing process?
Original Abstract Submitted
disclosed is a method of manufacturing a semiconductor device, including: forming a first metal layer; forming a conductive layer on the first metal layer; forming a capping layer on the conductive layer; etching the first metal layer, the conductive layer, and the capping layer; depositing a bonding oxide layer; etching the bonding oxide layer and the capping layer; forming a first bonding metal layer in an etched space; and forming a second metal layer on the first bonding metal layer.